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240 A Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS150R17KE3GBOSA1 by Infineon Technologies

FS150R17KE3GBOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 240 A; Terminal Position: UPPER; Maximum Collector-Emitter Voltage: 1700 V;

ISOLATED

240 A

1700 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X29

6

29

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1300 ns

366 ns

FF150R17ME3GBOSA1 by Infineon Technologies

FF150R17ME3GBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 240 A; Nominal Turn On Time (ton): 366 ns; JESD-30 Code: R-XUFM-X11;

ISOLATED

240 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1300 ns

366 ns

FF200R12KE4HOSA1 by Infineon Technologies

FF200R12KE4HOSA1

Infineon Technologies

FF200R12KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and current of 240A, making it ideal for POWER CONTROL applications. With a turn-off time of 800ns and turn-on time of 325ns, this RECTANGULAR package transistor operates at up to 175°C.

ISOLATED

240 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X5

2

5

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

800 ns

325 ns

AFGY160T65SPD-B4 by Onsemi

AFGY160T65SPD-B4

Onsemi

AFGY160T65SPD-B4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.05V and a max IC of 240A. Ideal for power control applications, it has a max operating temperature of 175 °C and a collector-emitter voltage of 650V.

240 A

650 V

SINGLE WITH BUILT-IN DIODE

6.3 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

882 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

2.05 V

AFGY120T65SPD-B4 by Onsemi

AFGY120T65SPD-B4

Onsemi

AFGY120T65SPD-B4 by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 1.85V and Max Collector-Emitter Voltage of 650V. Ideal for POWER CONTROL applications, it has a Nominal Turn Off Time of 247ns and can handle up to 240A of Max Collector Current (IC).

RC-IGBT

240 A

650 V

SINGLE WITH BUILT-IN DIODE

6.2 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

882 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

183 ns

1.85 V

IXYH85N120C4 by Littelfuse

IXYH85N120C4

Littelfuse

Littelfuse IXYH85N120C4 is an N-CHANNEL IGBT with 1200V VCEsat, 240A IC, and 1150W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 317ns and high operating temperature range (-55°C to 175°C). Package style is FLANGE MOUNT with RECTANGULAR shape.

COLLECTOR

240 A

1200 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1150 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

317 ns

95 ns

2.5 V