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22 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS15R06VE3B2BOMA1 by Infineon Technologies

FS15R06VE3B2BOMA1

Infineon Technologies

Infineon's FS15R06VE3B2BOMA1 is a N-CHANNEL IGBT with 6 elements, 600V max collector-emitter voltage, and 22A max collector current. Ideal for power control applications, it features a complex configuration, 260ns turn off time, and UL recognized standard.

ISOLATED

22 A

600 V

COMPLEX

R-XUFM-X15

1

6

15

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

260 ns

29 ns

FP15R06W1E3B11BOMA1 by Infineon Technologies

FP15R06W1E3B11BOMA1

Infineon Technologies

Infineon's FP15R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 7 elements, 600V max collector-emitter voltage, and 22A max collector current. Ideal for power control applications, it features a complex configuration, 260ns turn off time (toff), and 29ns turn on time (ton).

ISOLATED

22 A

600 V

COMPLEX

R-XUFM-X23

7

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

260 ns

29 ns

STGF30NC60S by STMicroelectronics

STGF30NC60S

STMicroelectronics

STGF30NC60S from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 555ns, and can handle up to 22A. Ideal for high-temperature environments with a max operating temp of 150 °C.

ISOLATED

22 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

40 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

555 ns

30 ns