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18 A Insulated Gate Bipolar Transistors (IGBT) 8

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IGA30N60H3XKSA1 by Infineon Technologies

IGA30N60H3XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; No. of Elements: 1; Nominal Turn On Time (ton): 40 ns;

ISOLATED

18 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

40 ns

IKP08N65H5XKSA1 by Infineon Technologies

IKP08N65H5XKSA1

Infineon Technologies

IKP08N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCEsat, 18A IC, and 70W power dissipation. Ideal for POWER CONTROL applications due to its built-in diode, 130ns turn-off time, and -40 to 175°C operating temperature range.

COLLECTOR

18 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

130 ns

16 ns

2.1 V

NGB18N40CLBT4 by Onsemi

NGB18N40CLBT4

Onsemi

NGB18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

e0

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

115 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

13000 ns

5200 ns

NGB18N40CLBT4G by Onsemi

NGB18N40CLBT4G

Onsemi

NGB18N40CLBT4G by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 430V and a max gate-emitter voltage of 18V. It has a built-in diode and resistor, making it suitable for automotive ignition applications. This IGBT has a max power dissipation of 115W and operates at temperatures up to 175 °C.

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

115 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

13000 ns

5200 ns

NGB8204NT4G by Onsemi

NGB8204NT4G

Onsemi

NGB8204NT4G by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

115 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

13000 ns

5200 ns

LGD18N45TH by Littelfuse

LGD18N45TH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; Maximum Turn On Time (ton): 10400 ns;

COLLECTOR

18 A

500 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

7000 ns

1.9 V

18 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

AEC-Q101

9000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

19000 ns

5400 ns

10400 ns

2920 ns

2.85 V

LGB8204ATH by Littelfuse

LGB8204ATH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15000 ns

1.9 V

18 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

13000 ns

11000 ns

5200 ns

LGB18N40ATH by Littelfuse

LGB18N40ATH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; No. of Elements: 1;

COLLECTOR

18 A

430 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

18 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

115 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

25000 ns

13000 ns

11000 ns

5200 ns