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12 A Insulated Gate Bipolar Transistors (IGBT) 15

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SGB06N60ATMA1 by Infineon Technologies

SGB06N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

SKP06N60XKSA1 by Infineon Technologies

SKP06N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

318 ns

41 ns

SGD06N60BUMA1 by Infineon Technologies

SGD06N60BUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Nominal Turn On Time (ton): 41 ns; Qualification: Not Qualified;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-252AA

R-PSSO-G2

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

318 ns

41 ns

SGP06N60XKSA1 by Infineon Technologies

SGP06N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-220AB; No. of Terminals: 3;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

SKB06N60HSATMA1 by Infineon Technologies

SKB06N60HSATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSSO-G2; Nominal Turn Off Time (toff): 245 ns;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

245 ns

23 ns

SKB06N60ATMA1 by Infineon Technologies

SKB06N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Qualification: Not Qualified; Nominal Turn Off Time (toff): 318 ns;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

318 ns

41 ns

IKU06N60RBKMA1 by Infineon Technologies

IKU06N60RBKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-251

R-PSIP-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

335 ns

22 ns

FP06R12W1T4B3BOMA1 by Infineon Technologies

FP06R12W1T4B3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 12 A; Nominal Turn Off Time (toff): 565 ns;

ISOLATED

12 A

1200 V

COMPLEX

6.4 V

20 V

R-XUFM-X20

6

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

94 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

565 ns

95 ns

2.25 V

IKD06N60R by Infineon Technologies

IKD06N60R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Transistor Application: POWER CONTROL;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

335 ns

22 ns

IKD06N60RAATMA2 by Infineon Technologies

IKD06N60RAATMA2

Infineon Technologies

IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-252

R-PSSO-G2

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

GENERAL PURPOSE

SILICON

335 ns

22 ns

IKD06N60RFAATMA1 by Infineon Technologies

IKD06N60RFAATMA1

Infineon Technologies

IKD06N60RFAATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector-emitter voltage of 600V. It is used for power control applications and has a small outline package style, making it suitable for surface mount designs.

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

100 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

149 ns

17 ns

2.5 V

IKD06N60RAATMA1 by Infineon Technologies

IKD06N60RAATMA1

Infineon Technologies

IKD06N60RAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, suitable for applications requiring fast switching such as motor drives and power supplies.

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-252

R-PSSO-G2

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

GENERAL PURPOSE

SILICON

335 ns

22 ns

AIHD06N60RATMA1 by Infineon Technologies

AIHD06N60RATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-252;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

AEC-Q101

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

335 ns

22 ns

2.1 V

AIHD06N60RFATMA1 by Infineon Technologies

AIHD06N60RFATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Minimum Operating Temperature: -40 Cel;

COLLECTOR

12 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-252

R-PSSO-G2

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

AEC-Q101

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

149 ns

17 ns

2.5 V

LGD8209TI by Littelfuse

LGD8209TI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 12 A; Transistor Application: AUTOMOTIVE IGNITION;

COLLECTOR

12 A

445 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

2 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

94 W

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON