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105 A Insulated Gate Bipolar Transistors (IGBT) 10

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS75R12KE3BOSA1 by Infineon Technologies

FS75R12KE3BOSA1

Infineon Technologies

FS75R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.

ISOLATED

105 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X28

6

28

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

340 ns

BSM75GAL120DN2HOSA1 by Infineon Technologies

BSM75GAL120DN2HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; JESD-30 Code: R-XUFM-X7; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

105 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

520 ns

100 ns

FP75R12KT3BOSA1 by Infineon Technologies

FP75R12KT3BOSA1

Infineon Technologies

Infineon Technologies' FP75R12KT3BOSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 105A, and max. collector-emitter voltage of 1200V. It has a nominal turn off time of 610ns and turn on time of 340ns, ideal for power control applications at up to 150°C operating temperature.

ISOLATED

105 A

1200 V

COMPLEX

R-XUFM-X35

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

340 ns

FS75R12KT3BOSA1 by Infineon Technologies

FS75R12KT3BOSA1

Infineon Technologies

Infineon FS75R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial systems like motor drives and renewable energy converters.

ISOLATED

105 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X28

6

28

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

340 ns

FP75R12KE3BOSA1 by Infineon Technologies

FP75R12KE3BOSA1

Infineon Technologies

FP75R12KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements and a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 610ns and a max collector current of 105A, making it suitable for high-power applications like industrial motor drives and renewable energy systems.

ISOLATED

105 A

1200 V

COMPLEX

R-XUFM-X35

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

330 ns

MG1275S-BA1MM by Littelfuse

MG1275S-BA1MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Reference Standard: UL RECOGNIZED; Package Body Material: UNSPECIFIED;

ISOLATED

105 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

570 ns

225 ns

MG1275H-XN2MM by Littelfuse

MG1275H-XN2MM

Littelfuse

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

ISOLATED

105 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X28

6

28

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

610 ns

340 ns

MG1275W-XBN2MM by Littelfuse

MG1275W-XBN2MM

Littelfuse

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Nominal Turn On Time (ton): 340 ns; Terminal Form: UNSPECIFIED;

ISOLATED

105 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X24

7

24

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

610 ns

340 ns

MG1275W-XN2MM by Littelfuse

MG1275W-XN2MM

Littelfuse

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Transistor Application: POWER CONTROL; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

ISOLATED

105 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-PUFM-X35

6

35

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

340 ns

FS75R12KE3B9BOSA1 by Infineon Technologies

FS75R12KE3B9BOSA1

Infineon Technologies

FS75R12KE3B9BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 105A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.

ISOLATED

105 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X26

6

26

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

340 ns