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1000 A Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1000R33HE3BOSA1 by Infineon Technologies

FZ1000R33HE3BOSA1

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1000 A; No. of Terminals: 7;

ISOLATED

1000 A

3300 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

9600 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

3550 ns

1150 ns

3.1 V

CM1000E3U-34NF by Powerex

CM1000E3U-34NF

Powerex

Powerex CM1000E3U-34NF is an N-CHANNEL IGBT with 1700V VCE, 1000A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style.

ISOLATED

1000 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

FD200R65KF2-K by Infineon Technologies

FD200R65KF2-K

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3800 W; Maximum Collector Current (IC): 1000 A; Maximum VCEsat: 4.9 V;

1000 A

6300 V

SINGLE WITH BUILT-IN DIODE

20 V

R-XUFM-X7

1

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3800 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

6500 ns

1120 ns

4.9 V

FD1000R33HE3KBPSA1 by Infineon Technologies

FD1000R33HE3KBPSA1

Infineon Technologies

Infineon's FD1000R33HE3KBPSA1 is a N-CHANNEL IGBT with 2 elements & built-in diode. It has a max collector-emitter voltage of 3300V, collector current of 1000A, and turn-off time of 3550ns. Ideal for power control applications due to its common gate configuration and silicon material.

ISOLATED

1000 A

3300 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X9

2

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

3550 ns

1150 ns

FZ1000R33HE3BPSA1 by Infineon Technologies

FZ1000R33HE3BPSA1

Infineon Technologies

Infineon's FZ1000R33HE3BPSA1 is a N-CHANNEL IGBT with 2 elements in parallel. It has a max collector current of 1000A and turn off time of 3550ns, suitable for power control applications. The transistor operates at a max voltage of 3300V, featuring silicon material and isolated case connection.

ISOLATED

1000 A

3300 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

3550 ns

1150 ns

DF1000R17IE4PBPSA1 by Infineon Technologies

DF1000R17IE4PBPSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1000 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;

ISOLATED

1000 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-PUFM-X12

1

12

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1890 ns

720 ns

2.45 V