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PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1200R33KF2CNOSA1 by Infineon Technologies

FZ1200R33KF2CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 14500 W; Maximum Collector Current (IC): 2000 A; Case Connection: ISOLATED;

ISOLATED

2000 A

3300 V

PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X9

3

9

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

14500 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1900 ns

480 ns

4.25 V

FZ750R65KE3NOSA1 by Infineon Technologies

FZ750R65KE3NOSA1

Infineon Technologies

FZ750R65KE3NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements in parallel configuration. It has a max collector-emitter voltage of 6500V and nominal turn off time of 8100ns, making it ideal for power control applications. The transistor's package style is flange mount with 9 terminals, operating at a max temperature of 150°C.

6500 V

PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X9

3

9

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

8100 ns

1200 ns

FZ1800R12HP4B9NPSA1 by Infineon Technologies

FZ1800R12HP4B9NPSA1

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2700 A; Nominal Turn Off Time (toff): 1330 ns; Package Body Material: UNSPECIFIED;

ISOLATED

2700 A

1200 V

PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X9

3

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1330 ns

720 ns

FZ1800R12HP4B9HOSA2 by Infineon Technologies

FZ1800R12HP4B9HOSA2

Infineon Technologies

FZ1800R12HP4B9HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements in parallel configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 2700A, making it ideal for power control applications. With a nominal turn-off time of 1330ns and turn-on time of 720ns, this IGBT is designed for efficient switching operations.

ISOLATED

2700 A

1200 V

PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X9

1

3

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1330 ns

720 ns