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COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 8

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FD800R33KF2CNOSA1 by Infineon Technologies

FD800R33KF2CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1300 A; Terminal Form: UNSPECIFIED; Case Connection: ISOLATED;

ISOLATED

1300 A

3300 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

480 ns

FZ2400R12HP4NPSA1 by Infineon Technologies

FZ2400R12HP4NPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 3460 A; Maximum Operating Temperature: 150 Cel; Terminal Form: UNSPECIFIED;

ISOLATED

3460 A

1200 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1440 ns

880 ns

FD500R65KE3KNOSA1 by Infineon Technologies

FD500R65KE3KNOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: UPPER; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-XUFM-X9;

ISOLATED

6500 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X9

2

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

8100 ns

1200 ns

FD1000R33HE3KBPSA1 by Infineon Technologies

FD1000R33HE3KBPSA1

Infineon Technologies

Infineon's FD1000R33HE3KBPSA1 is a N-CHANNEL IGBT with 2 elements & built-in diode. It has a max collector-emitter voltage of 3300V, collector current of 1000A, and turn-off time of 3550ns. Ideal for power control applications due to its common gate configuration and silicon material.

ISOLATED

1000 A

3300 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X9

2

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

3550 ns

1150 ns

FD16001200R17HP4KB2BOSA1 by Infineon Technologies

FD16001200R17HP4KB2BOSA1

Infineon Technologies

Infineon's FD16001200R17HP4KB2BOSA1 is an N-CHANNEL IGBT with 2 elements & built-in diode, ideal for power control applications. Featuring a max VCEsat of 2.25V, it can handle up to 10500W power dissipation at 150°C. With a max VCE of 1700V and turn-off time of 1710ns, this UL-approved transistor ensures efficient performance in high-power systems.

ISOLATED

1700 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

6.4 V

20 V

R-PUFM-X9

2

9

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

10500 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1710 ns

650 ns

2.25 V

FZ2400R12HP4HOSA2 by Infineon Technologies

FZ2400R12HP4HOSA2

Infineon Technologies

Infineon's FZ2400R12HP4HOSA2 IGBT features N-CHANNEL polarity, 2 elements with built-in diode in a common gate configuration. Ideal for power control applications, it offers a max collector-emitter voltage of 1200V and a max collector current of 3460A. With nominal turn-off time of 1440ns and turn-on time of 880ns, this rectangular package with flange mount is designed for isolated case connection.

ISOLATED

3460 A

1200 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

1

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1440 ns

880 ns

FD1000R33HL3KBPSA1 by Infineon Technologies

FD1000R33HL3KBPSA1

Infineon Technologies

Infineon's FD1000R33HL3KBPSA1 is a N-CHANNEL IGBT with 2 elements & built-in diode. It has a max Vce of 3300V, toff of 4700ns, and ton of 1050ns. Ideal for power control applications due to its common gate configuration and isolated case connection in a rectangular package style.

ISOLATED

3300 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X9

2

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

4700 ns

1050 ns

FD800R45KL3KB5NPSA1 by Infineon Technologies

FD800R45KL3KB5NPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Application: POWER CONTROL; Nominal Turn Off Time (toff): 7350 ns;

ISOLATED

4500 V

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-PUFM-X9

2

9

-50 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

7350 ns

1050 ns