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BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH35C120L2C2S1G by Onsemi

NXH35C120L2C2S1G

Onsemi

NXH35C120L2C2S1G by Onsemi is an IGBT with 6 elements, built-in diode, and thermistor in a plastic/epoxy package. It has a max VCEsat of 2.4V and can handle up to 35A collector current. Ideal for power control applications requiring N-channel configuration and three-phase diode bridge setup.

ISOLATED

35 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

6.8 V

20 V

R-PDIP-T26

6

26

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

NO

THROUGH-HOLE

DUAL

POWER CONTROL

SILICON

485 ns

240 ns

2.4 V

NXH25C120L2C2SG by Onsemi

NXH25C120L2C2SG

Onsemi

NXH25C120L2C2SG by Onsemi is an IGBT transistor with 1200V VCEsat, 25A IC, and 320ns toff. Ideal for motor control applications due to its N-CHANNEL polarity and BRIDGE configuration with built-in diode. Operates in temperatures from -40 °C to 150°C, making it suitable for various industrial settings.

ISOLATED

25 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

6.8 V

20 V

R-PDIP-T26

7

26

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

NO

THROUGH-HOLE

DUAL

MOTOR CONTROL

SILICON

320 ns

128 ns

2.4 V