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32 RF & Microwave Amplifiers 20

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
TRF1123IRTMTG3 by Texas Instruments

TRF1123IRTMTG3

Texas Instruments

TRF1123IRTMTG3 by Texas Instruments is a RF amplifier with 26dB gain, operating frequency range of 2100-2700MHz, and 20dBm max input power. Ideal for narrow band medium power applications requiring surface mounting feature and 50 ohm characteristic impedance.

50 ohm

COMPONENT

26 dB

20 dBm

e3

SURFACE MOUNT

1

32

2700 MHz

2100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

7

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

700 mA

Matte Tin (Sn)

HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

ADPA1106ACGZN by Analog Devices

ADPA1106ACGZN

Analog Devices

ADPA1106ACGZN by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating from 2700 MHz to 3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

ADPA1106ACGZN-R7 by Analog Devices

ADPA1106ACGZN-R7

Analog Devices

ADPA1106ACGZN-R7 by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating b/w 2700-3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

HMC1114LP5DE by Analog Devices

HMC1114LP5DE

Analog Devices

HMC1114LP5DE by Analog Devices is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and operates at temperatures ranging from -40 °C to 85°C. Ideal for wideband high-power applications requiring a component construction with surface mounting feature.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC1099LP5DETR by Analog Devices

HMC1099LP5DETR

Analog Devices

HMC1099LP5DETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40 °C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC994ALP5E by Analog Devices

HMC994ALP5E

Analog Devices

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.

50 ohm

COMPONENT

11 dB

e3

SURFACE MOUNT

1

32

28000 MHz

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

300 mA

PHEMT

Matte Tin (Sn)

HMC1114LP5DETR by Analog Devices

HMC1114LP5DETR

Analog Devices

Analog Devices' HMC1114LP5DETR is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and requires a 28 V power supply, drawing up to 150 mA. This wideband high-power device is ideal for applications requiring surface mount construction in RF and microwave systems.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC797ALP5E by Analog Devices

HMC797ALP5E

Analog Devices

HMC797ALP5E by Analog Devices is a GAAS RF amplifier with 11dB gain, operating from 0-22000MHz. It has a max input power of 27dBm and VSWR of 7, suitable for wideband medium power applications. With a compact design and surface mount feature, it operates at temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

11 dB

27 dBm

SURFACE MOUNT

1

32

22000 MHz

0 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

3.5,10

WIDE BAND MEDIUM POWER

440 mA

GAAS

7

HMC907APM5E by Analog Devices

HMC907APM5E

Analog Devices

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

HMC637BPM5E by Analog Devices

HMC637BPM5E

Analog Devices

Analog Devices' HMC637BPM5E is a GAAS RF amplifier with 12.5 dB gain, operating from 0 to 7500 MHz. It has a max input power of 25 dBm and VSWR of 7, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount construction and operating temperatures from -55°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7

HMC637BPM5ETR by Analog Devices

HMC637BPM5ETR

Analog Devices

Analog Devices' HMC637BPM5ETR is a GAAS RF amplifier with 12.5 dB gain, 50 ohm impedance, and 25 dBm CW input power. It operates from 0 to 7500 MHz, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount design and high VSWR tolerance of 7, it's ideal for various communication and radar systems.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7

HMC1099PM5ETR by Analog Devices

HMC1099PM5ETR

Analog Devices

HMC1099PM5ETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC1099PM5E by Analog Devices

HMC1099PM5E

Analog Devices

HMC1099PM5E by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in temperatures ranging from -40°C to 85°C. The component features a plastic/epoxy package body material and surface mounting feature.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC8500PM5ETR by Analog Devices

HMC8500PM5ETR

Analog Devices

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC8500PM5E by Analog Devices

HMC8500PM5E

Analog Devices

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

ADPA1105ACGZN by Analog Devices

ADPA1105ACGZN

Analog Devices

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

30.5 dB

30 dBm

e4

SURFACE MOUNT

1

32

1600 MHz

900 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

NARROW BAND HIGH POWER

GAN

NICKEL PALLADIUM GOLD

1.5

ADPA1105ACGZN-R7 by Analog Devices

ADPA1105ACGZN-R7

Analog Devices

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Technology: GAN; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 30 dBm;

50 ohm

COMPONENT

30.5 dB

30 dBm

e4

SURFACE MOUNT

1

32

1600 MHz

900 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

NARROW BAND HIGH POWER

GAN

NICKEL PALLADIUM GOLD

1.5