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17 RF & Microwave Amplifiers 9

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
AFIC31025GNR1 by NXP Semiconductors

AFIC31025GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A3I35D012WGNR1 by NXP Semiconductors

A3I35D012WGNR1

NXP Semiconductors

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 4000 MHz;

50 ohm

COMPONENT

26.5 dB

26 dBm

SURFACE MOUNT

2

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

FLNG,.72"H.SPACE

28

NARROW BAND MEDIUM POWER

A2I20D040GNR1 by NXP Semiconductors

A2I20D040GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I20D040NR1 by NXP Semiconductors

A2I20D040NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060GNR1 by NXP Semiconductors

A2I35H060GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 3800 MHz;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060NR1 by NXP Semiconductors

A2I35H060NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

AFIC31025NR1 by NXP Semiconductors

AFIC31025NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; No. of Functions: 2;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A3I35D025WGNR1 by NXP Semiconductors

A3I35D025WGNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

26.5 dB

28 dBm

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

10

A3I35D025WNR1 by NXP Semiconductors

A3I35D025WNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3200 MHz;

50 ohm

COMPONENT

26.5 dB

28 dBm

e3

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10