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PHOTO DARLINGTON Phototransistors 3

Phototransistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Collector-emitter Breakdown Voltage Configuration Maximum Dark Current Infrared (IR) Range JESD-609 Code Nominal Light Current Mounting Feature No. of Functions Maximum On State Current Maximum Operating Temperature Minimum Operating Temperature Optoelectronic Type Packing Method Peak Wavelength (nm) Maximum Power Dissipation Maximum Response Time Shape Size Sub-Category Nominal Supply Voltage Terminal Finish
NTE3122 by Nte Electronics

NTE3122

Nte Electronics

NTE3122 by Nte Electronics is a PHOTO DARLINGTON phototransistor with peak wavelength of 860nm. It operates b/w -25°C to 85°C, has max power dissipation of 0.075W, and max response time of 0.00008s. Ideal for applications requiring IR detection due to its infrared range capability.

35 V

SINGLE

1000 nA

YES

THROUGH HOLE MOUNT

1

.05 A

85 Cel

-25 Cel

PHOTO DARLINGTON

860

.075 W

.00008 s

ROUND

Photo Transistors

PT481E00000F by Sharp Corporation

PT481E00000F

Sharp Corporation

Sharp Corporation's PT481E00000F is a 1.6mm PHOTO DARLINGTON phototransistor with peak wavelength of 800nm. It operates b/w -25°C to 85°C, has Tin/Silver/Copper terminal finish, and nominal light current of 10mA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 35V.

SIDE VIEW

35 V

SINGLE

1000 nA

YES

e1

10 mA

1

85 Cel

-25 Cel

PHOTO DARLINGTON

800

ROUND

1.6 mm

Tin/Silver/Copper (Sn/Ag/Cu)

PT481FE0000F by Sharp Corporation

PT481FE0000F

Sharp Corporation

Sharp Corporation's PT481FE0000F is a 1.6mm PHOTO DARLINGTON phototransistor with peak wavelength of 860nm. Operating b/w -25°C to 85°C, it has a min collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current up to 0.9mA.

SIDE VIEW

35 V

SINGLE

1000 nA

YES

e1

.9 mA

1

85 Cel

-25 Cel

PHOTO DARLINGTON

860

ROUND

1.6 mm

Tin/Silver/Copper (Sn/Ag/Cu)