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FBGA SRAM 4

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS61LV25616AL-10BI-TR by Integrated Silicon Solution

IS61LV25616AL-10BI-TR

Integrated Silicon Solution

IS61LV25616AL-10BI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with a 3.3V supply voltage and an operating temperature range of -40 to 85°C. It features a parallel interface and has a max access time of 10ns. This memory IC is commonly used in industrial applications requiring high-speed data storage.

10 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3.3

Not Qualified

.015 Amp

2 V

SRAMs

100 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

IS61LV25616AL-10BLI-TR by Integrated Silicon Solution

IS61LV25616AL-10BLI-TR

Integrated Silicon Solution

IS61LV25616AL-10BLI-TR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. It features a grid array package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact form factors.

10 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3.3

Not Qualified

.015 Amp

2 V

SRAMs

100 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

CY62147EV30LL-45B2XAT by Cypress Semiconductor

CY62147EV30LL-45B2XAT

Cypress Semiconductor

CY62147EV30LL-45B2XAT by Cypress Semiconductor is a 256Kx16 SRAM with 45 ns access time, operating at 2.5/3.3V. It features a grid array package style, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in electronic devices.

45 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

.000007 Amp

1.5 V

SRAMs

20 mA

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

MT45W2MW16BGB-708AT by Micron Technology

MT45W2MW16BGB-708AT

Micron Technology

SRAMs; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

70 ns

COMMON

R-PBGA-B54

e3

33554432 bit

16

1

54

2097152 words

2M

105 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8,1.8/3.3

Not Qualified

.00011 Amp

Other Memory ICs

35 mA

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM