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INDUSTRIAL OTP ROM 84

OTP ROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width Write Protection
M27C1001-10C6 by STMicroelectronics

M27C1001-10C6

STMicroelectronics

M27C1001-10C6 by STMicroelectronics is a 128KX8 OTP ROM chip with 100ns access time, operating at 5V. It features a 32-terminal chip carrier package and supports asynchronous operation. Ideal for industrial applications requiring non-volatile memory storage in a compact form factor.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-12C6 by STMicroelectronics

M27C1001-12C6

STMicroelectronics

STMicroelectronics M27C1001-12C6 is a 128Kx8 OTP ROM with 120ns access time, operating at 5V. It features 3-STATE output and CMOS technology, suitable for industrial applications requiring non-volatile memory storage in a compact chip carrier package.

120 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-15C6TR by STMicroelectronics

M27C1001-15C6TR

STMicroelectronics

STMicroelectronics M27C1001-15C6TR is a 128KX8 OTP ROM with 150ns access time, operating at 5V. It features 3-STATE output and CMOS technology, suitable for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

150 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-70C6 by STMicroelectronics

M27C1001-70C6

STMicroelectronics

M27C1001-70C6 by STMicroelectronics is a 128KX8 OTP ROM chip with 70 ns access time, operating at 5V. It features a 32-terminal chip carrier package and supports asynchronous operation. Ideal for industrial applications requiring non-volatile memory storage in a compact form factor.

70 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W402-100K6 by STMicroelectronics

M27W402-100K6

STMicroelectronics

M27W402-100K6 by STMicroelectronics is a 256KX16 OTP ROM with 3-STATE output, operating at 3V. It features a max access time of 100ns and industrial temperature grade. Commonly used in applications requiring non-volatile memory storage with parallel interface.

100 ns

ACCESS TIME 80 NANO SECS AT VCC 3V TO 3.6V

COMMON

S-PQCC-J44

e3

16.586 mm

4194304 bit

OTP ROM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

4.57 mm

.00002 Amp

OTP ROMs

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

16.586 mm

M27W102-80K6 by STMicroelectronics

M27W102-80K6

STMicroelectronics

OTP ROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Terminal Position: QUAD;

80 ns

COMMON

S-PQCC-J44

e0

16.5862 mm

1048576 bit

OTP ROM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

4.7 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

16.5862 mm

M27W201-80K6 by STMicroelectronics

M27W201-80K6

STMicroelectronics

STMicroelectronics M27W201-80K6 is an OTP ROM chip with 256Kx8 organization, 80 ns access time, and 3.56 mm seated height. It operates in industrial temperature range and has a memory density of 2097152 bit. Ideal for applications requiring non-volatile memory storage in harsh environments.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PQCC-J32

e3

13.97 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.56 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W512-100K6TR by STMicroelectronics

M27W512-100K6TR

STMicroelectronics

M27W512-100K6TR by STMicroelectronics is a 64KX8 OTP ROM chip with 3-STATE output, operating at 3V. It features a max access time of 100ns and is ideal for industrial applications requiring non-volatile memory storage in a compact rectangular chip carrier package.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.556 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W512-100K6 by STMicroelectronics

M27W512-100K6

STMicroelectronics

STMicroelectronics M27W512-100K6 is a 64KX8 OTP ROM chip with 3-STATE output, operating at -40 to 85 °C. It has a supply voltage of 2.7-3.6V and max access time of 100ns. Ideal for industrial applications requiring non-volatile memory storage in compact form factor.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.556 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-35C6 by STMicroelectronics

M27C1001-35C6

STMicroelectronics

STMicroelectronics M27C1001-35C6 is a 128Kx8 OTP ROM with 35 ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

35 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W101-80K6 by STMicroelectronics

M27W101-80K6

STMicroelectronics

STMicroelectronics M27W101-80K6 is a 128KX8 OTP ROM with 131072 words, operating at 3V. It features an access time of 80ns, industrial temperature grade, and CMOS technology. Commonly used in applications requiring non-volatile memory storage with a parallel interface.

80 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.56 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W201-80B6 by STMicroelectronics

M27W201-80B6

STMicroelectronics

STMicroelectronics M27W201-80B6 is a 256Kx8 OTP ROM with 80ns access time, operating at 3V. It features a 32-terminal IN-LINE package suitable for industrial applications. The memory density is 2097152 bit, making it ideal for storing large amounts of data efficiently.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDIP-T32

e3

42.035 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3/3.3

Not Qualified

4.83 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27W801-100K6 by STMicroelectronics

M27W801-100K6

STMicroelectronics

M27W801-100K6 by STMicroelectronics is a 1MX8 OTP ROM with 1048576 words memory width and 8388608 bit memory density. Operating at 3V, it has a max access time of 100ns and is ideal for industrial applications requiring reliable non-volatile memory storage.

100 ns

ACCESS TIME 80 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PQCC-J32

e3

13.97 mm

8388608 bit

OTP ROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.56 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W801-100N6 by STMicroelectronics

M27W801-100N6

STMicroelectronics

M27W801-100N6 by STMicroelectronics is a 1MX8 OTP ROM with 1048576 words, 8388608 bit memory density, and 100 ns max access time. It operates in industrial temperature grade and has a parallel interface. This device is suitable for applications requiring non-volatile memory storage in compact electronic systems.

100 ns

ACCESS TIME 80 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDSO-G32

e0

18.4 mm

8388608 bit

OTP ROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

8 mm

M27W401-80B6 by STMicroelectronics

M27W401-80B6

STMicroelectronics

M27W401-80B6 by STMicroelectronics is a 512Kx8 OTP ROM with 80ns access time. It operates at 3V, has a temperature range of -40 to 85 °C, and consumes up to 15mA. Commonly used in industrial applications requiring non-volatile memory storage.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDIP-T32

e3

41.91 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3/3.3

Not Qualified

5.08 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27W401-80K6 by STMicroelectronics

M27W401-80K6

STMicroelectronics

M27W401-80K6 by STMicroelectronics is a 512Kx8 OTP ROM chip with 80ns access time, operating at 3V. It features a CMOS technology, 32 terminals in a rectangular chip carrier package suitable for industrial applications. With common I/O type and 3-state output characteristics, it offers reliable non-volatile memory storage solutions.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

260

3/3.3

Not Qualified

3.56 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

10

11.43 mm

M27W401-80N6 by STMicroelectronics

M27W401-80N6

STMicroelectronics

OTP ROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PTSO-G32

e3/e6

18.4 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

TRIPLE

NOT SPECIFIED

8 mm

M27W402-100B6 by STMicroelectronics

M27W402-100B6

STMicroelectronics

M27W402-100B6 by STMicroelectronics is a 256KX16 OTP ROM with 3-STATE output, operating at 3V. It features an industrial temperature grade, parallel interface, and through-hole terminal form. Ideal for applications requiring non-volatile memory storage in harsh environments.

100 ns

ACCESS TIME 80 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDIP-T40

e3

52.18 mm

4194304 bit

OTP ROM

16

1

40

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

DIP

DIP40,.6

RECTANGULAR

IN-LINE

PARALLEL

245

3/3.3

Not Qualified

.000015 Amp

OTP ROMs

50 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27W202-100K6 by STMicroelectronics

M27W202-100K6

STMicroelectronics

STMicroelectronics M27W202-100K6 is a 128KX16 OTP ROM chip carrier with 131072 words, 2097152 bit memory density, and 100 ns access time. It operates at -40 to 85 °C in industrial settings, featuring a common I/O type for asynchronous applications.

100 ns

COMMON

S-PQCC-J44

e0

16.5862 mm

2097152 bit

OTP ROM

16

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

4.7 mm

.000015 Amp

OTP ROMs

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

16.5862 mm

M27C256B-10B6 by STMicroelectronics

M27C256B-10B6

STMicroelectronics

STMicroelectronics M27C256B-10B6 is a 32KX8 OTP ROM with 100ns access time, operating at 5V. It features 3-STATE output and CMOS technology, suitable for industrial applications requiring reliable non-volatile memory storage. The device has a compact IN-LINE package style with through-hole terminals, making it ideal for embedded systems in harsh environments.

100 ns

COMMON

R-PDIP-T28

e3

36.83 mm

262144 bit

OTP ROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12.75

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-90B6 by STMicroelectronics

M27C256B-90B6

STMicroelectronics

STMicroelectronics M27C256B-90B6 is a 32KX8 OTP ROM with 3-STATE output, operating at 5V. It has a max access time of 90ns and is ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

90 ns

COMMON

R-PDIP-T28

e3

36.83 mm

262144 bit

OTP ROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12.75

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-70C6 by STMicroelectronics

M27C256B-70C6

STMicroelectronics

M27C256B-70C6 by STMicroelectronics is a 32KX8 OTP ROM with a memory density of 262144 bit. It operates asynchronously, has a max access time of 70 ns, and can be used in industrial applications.

70 ns

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12.75

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C256B-90C6 by STMicroelectronics

M27C256B-90C6

STMicroelectronics

M27C256B-90C6 by STMicroelectronics is a 32Kx8 OTP ROM with 3-STATE output, operating at 5V. It features a max access time of 90ns and is designed for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

90 ns

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12.75

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

AT27C512R-70RU by Atmel

AT27C512R-70RU

Atmel

Atmel's AT27C512R-70RU is a 64KX8 OTP ROM with 70 ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and GULL WING terminals. Ideal for applications requiring non-volatile memory storage in harsh environments.

70 ns

COMMON

R-PDSO-G28

e3

18.25 mm

524288 bit

OTP ROM

8

2

1

28

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

250

5

Not Qualified

2.79 mm

.0001 Amp

OTP ROMs

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

8.69 mm

AT27C512R-70TU by Atmel

AT27C512R-70TU

Atmel

Atmel's AT27C512R-70TU is a 64KX8 OTP ROM with 70 ns access time, operating at 5V. It features a small outline package, suitable for industrial applications. With 524288-bit memory density and parallel interface, it offers reliable non-volatile storage solutions.

70 ns

COMMON

R-PDSO-G28

11.8 mm

524288 bit

OTP ROM

8

1

28

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

1.2 mm

.0001 Amp

OTP ROMs

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.55 mm

DUAL

8 mm

M27C4002-70C6 by STMicroelectronics

M27C4002-70C6

STMicroelectronics

M27C4002-70C6 by STMicroelectronics is a 256Kx16 OTP ROM with a max access time of 70 ns, operating at 5V. It features a square chip carrier package and operates in industrial temperatures from -40 °C to 85 °C. Ideal for applications requiring reliable data storage in compact designs.

70 ns

COMMON

S-PQCC-J44

e3

16.586 mm

4194304 bit

OTP ROM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

4.57 mm

.0001 Amp

OTP ROMs

70 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

16.586 mm

AT27C010-45PU by Atmel

AT27C010-45PU

Atmel

AT27C010-45PU by Atmel is a 128KX8 OTP ROM with 45 ns access time, operating at 5V. It is commonly used in industrial applications for storing program code due to its high memory density and low standby current of 0.00001 Amp.

45 ns

COMMON

R-PDIP-T32

e3

42.037 mm

1048576 bit

OTP ROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

245

5

Not Qualified

4.826 mm

.00001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

AT27C512R-45TU by Atmel

AT27C512R-45TU

Atmel

Atmel's AT27C512R-45TU is a 64KX8 OTP ROM with 45 ns access time, operating at 5V. It features a small outline package, suitable for industrial applications. With 524288-bit memory density and parallel interface, it offers reliable non-volatile storage solutions.

45 ns

COMMON

R-PDSO-G28

e3

11.8 mm

524288 bit

OTP ROM

8

3

1

28

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.0001 Amp

OTP ROMs

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.55 mm

DUAL

8 mm

BQ2022DBZRG4 by Texas Instruments

BQ2022DBZRG4

Texas Instruments

OTP ROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Width: 1;

ORGANIZED AS 4 PAGES OF 32 BYTES EACH

.01667 MHz

COMMON

R-PDSO-G3

e4

2.92 mm

1024 bit

OTP ROM

1

1

1

3

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX1

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TO-236

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

1.12 mm

OTP ROMs

.02 mA

5.5 V

2.65 V

2.7

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.95 mm

DUAL

30

1.3 mm

AT27C020-90JU-T by Microchip Technology

AT27C020-90JU-T

Microchip Technology

Microchip Technology's AT27C020-90JU-T is a 256Kx8 OTP ROM with 90 ns access time. Operating at 5V, it features asynchronous mode and 3-STATE output. Ideal for industrial applications requiring non-volatile memory storage in a compact chip carrier package.

90 ns

COMMON

R-PQCC-J32

e3

13.97 mm

2097152 bit

OTP ROM

8

1

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

13

3.556 mm

.0001 Amp

25 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

AT27C2048-90JU-T by Microchip Technology

AT27C2048-90JU-T

Microchip Technology

Microchip Technology's AT27C2048-90JU-T is a 128Kx16 OTP ROM with 90 ns access time. Operating at 5V, it features 3-STATE output and supports parallel programming. Ideal for industrial applications requiring non-volatile memory with a capacity of 2Mb.

90 ns

COMMON

S-PQCC-J44

e3

16.586 mm

2097152 bit

OTP ROM

16

1

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

13

4.572 mm

.0001 Amp

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

16.586 mm

AT27C040-70JU-T by Microchip Technology

AT27C040-70JU-T

Microchip Technology

AT27C040-70JU-T by Microchip: 512Kx8 OTP ROM, 70 ns access time, 5V supply voltage. Ideal for industrial applications requiring reliable non-volatile memory with 3-STATE output and asynchronous operation.

70 ns

COMMON

R-PQCC-J32

13.97 mm

4194304 bit

OTP ROM

8

1

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

13

3.556 mm

.00001 Amp

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

QUAD

11.43 mm

AT27C1024-45JU-T by Microchip Technology

AT27C1024-45JU-T

Microchip Technology

AT27C1024-45JU-T by Microchip Technology is a 64KX16 OTP ROM with 45 ns access time, operating at 5V. It features a 3-STATE output and supports parallel programming. Ideal for industrial applications requiring non-volatile memory with fast read times and low standby current consumption.

45 ns

COMMON

S-PQCC-J44

16.586 mm

1048576 bit

OTP ROM

16

1

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL

13

4.572 mm

.0001 Amp

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

QUAD

16.586 mm

AT27LV040A-90JU-T by Microchip Technology

AT27LV040A-90JU-T

Microchip Technology

AT27LV040A-90JU-T by Microchip Technology is a 512KX8 OTP ROM with 3-STATE output, operating at 3.3V. It features a max access time of 90ns and is ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

90 ns

ALSO OPERATES AT 5V SUPPLY

COMMON

R-PQCC-J32

13.97 mm

4194304 bit

OTP ROM

8

1

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

13

3.556 mm

.00002 Amp

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

QUAD

11.43 mm

AT27LV512A-90JU-T by Microchip Technology

AT27LV512A-90JU-T

Microchip Technology

AT27LV512A-90JU-T by Microchip: 64KX8 OTP ROM with 3.3V, 85°C max temp, and 90ns access time. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

90 ns

ALSO OPERATES AT 5V SUPPLY

COMMON

R-PQCC-J32

13.97 mm

524288 bit

OTP ROM

8

1

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

13

3.556 mm

.00002 Amp

8 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

QUAD

11.43 mm

AT27C256R-70JU-306 by Microchip Technology

AT27C256R-70JU-306

Microchip Technology

AT27C256R-70JU-306 by Microchip: 32KX8 OTP ROM, 262144 bit memory density, 70 ns access time. Ideal for industrial applications requiring reliable non-volatile memory with a supply voltage range of 4.5V to 5.5V and operating temperatures from -40°C to 85°C.

70 ns

R-PQCC-J32

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

QUAD

11.43 mm