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MRAM MRAMs 75

MRAMs
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Minimum Data Retention Time Endurance JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width Maximum Write Cycle Time (tWC)
M3004316045NX0PBCY by Renesas Electronics

M3004316045NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 2.7 V; No. of Words Code: 256K;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316035NX0ITAY by Renesas Electronics

M3004316035NX0ITAY

Renesas Electronics

MRAM; No. of Terminals: 44; Package Code: TSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel; Memory Density: 4194304 bit;

35 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G44

e3

18.41 mm

4194304 bit

MRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3004316035NX0ITBY by Renesas Electronics

M3004316035NX0ITBY

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Memory Density: 4194304 bit; Minimum Standby Voltage: 2.7 V;

35 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

4194304 bit

MRAM

16

3

1

54

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3004316035NX0PTAY by Renesas Electronics

M3004316035NX0PTAY

Renesas Electronics

MRAM; No. of Terminals: 44; Package Code: TSOP; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm; Technology: CMOS;

35 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G44

e3

18.41 mm

4194304 bit

MRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3004316045NX0ITAR by Renesas Electronics

M3004316045NX0ITAR

Renesas Electronics

MRAM; No. of Terminals: 44; Package Code: TSOP; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Terminal Finish: TIN;

45 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G44

e3

18.41 mm

4194304 bit

MRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3004316045NX0PBCR by Renesas Electronics

M3004316045NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Terminal Form: BALL; No. of Words Code: 256K;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316045NX0PTBR by Renesas Electronics

M3004316045NX0PTBR

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Terminal Finish: TIN; Terminal Pitch: .8 mm;

45 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

4194304 bit

MRAM

16

3

1

54

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3008316035NX0IBCR by Renesas Electronics

M3008316035NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Terminal Form: BALL; Maximum Operating Temperature: 85 Cel;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316035NX0ITBR by Renesas Electronics

M3008316035NX0ITBR

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G54; Parallel or Serial: PARALLEL;

35 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

8388608 bit

MRAM

16

3

1

54

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3008316035NX0PBCR by Renesas Electronics

M3008316035NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Operating Mode: ASYNCHRONOUS; Minimum Data Retention Time: 10;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

105 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316045NX0IBCR by Renesas Electronics

M3008316045NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Maximum Standby Current: .0035 Amp; Operating Mode: ASYNCHRONOUS;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316045NX0PBCY by Renesas Electronics

M3008316045NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Endurance: 100000000000000 Write/Erase Cycles; Width: 10 mm;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

105 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316035NX0PBCR by Renesas Electronics

M3016316035NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Length: 10 mm; Minimum Standby Voltage: 2.7 V;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

105 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316045NX0PTBY by Renesas Electronics

M3016316045NX0PTBY

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.194 mm; Organization: 1MX16;

45 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

16777216 bit

MRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

105 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3004316035NX0IBCY by Renesas Electronics

M3004316035NX0IBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V; Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316035NX0PBCY by Renesas Electronics

M3004316035NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Technology: CMOS; Endurance: 100000000000000 Write/Erase Cycles;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316035NX0PTAR by Renesas Electronics

M3004316035NX0PTAR

Renesas Electronics

MRAM; No. of Terminals: 44; Package Code: TSOP; Package Shape: RECTANGULAR; Minimum Standby Voltage: 2.7 V; No. of Functions: 1;

35 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G44

e3

18.41 mm

4194304 bit

MRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3004316035NX0PTBR by Renesas Electronics

M3004316035NX0PTBR

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; Terminal Form: GULL WING;

35 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

4194304 bit

MRAM

16

3

1

54

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3004316045NX0IBCR by Renesas Electronics

M3004316045NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; No. of Words Code: 256K; Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316045NX0ITAY by Renesas Electronics

M3004316045NX0ITAY

Renesas Electronics

MRAM; No. of Terminals: 44; Package Code: TSOP; Package Shape: RECTANGULAR; Memory Density: 4194304 bit; JESD-609 Code: e3;

45 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G44

e3

18.41 mm

4194304 bit

MRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3004316045NX0PTBY by Renesas Electronics

M3004316045NX0PTBY

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

45 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

4194304 bit

MRAM

16

3

1

54

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3008316035NX0PTBY by Renesas Electronics

M3008316035NX0PTBY

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Memory Width: 16; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

35 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

8388608 bit

MRAM

16

3

1

54

524288 words

512K

ASYNCHRONOUS

105 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3008316045NX0ITBR by Renesas Electronics

M3008316045NX0ITBR

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .0035 Amp; Technology: CMOS;

45 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

8388608 bit

MRAM

16

3

1

54

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3008316045NX0PTBR by Renesas Electronics

M3008316045NX0PTBR

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Surface Mount: YES; Nominal Supply Voltage / Vsup (V): 3;

45 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

8388608 bit

MRAM

16

3

1

54

524288 words

512K

ASYNCHRONOUS

105 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3016316035NX0PTBR by Renesas Electronics

M3016316035NX0PTBR

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING; Maximum Supply Voltage (Vsup): 3.6 V;

35 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

16777216 bit

MRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

105 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm

M3016316045NX0IBCR by Renesas Electronics

M3016316045NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM; Terminal Finish: TIN SILVER COPPER;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316045NX0ITBY by Renesas Electronics

M3016316045NX0ITBY

Renesas Electronics

MRAM; No. of Terminals: 54; Package Code: TSOP; Package Shape: RECTANGULAR; Maximum Supply Current: 30 mA; Maximum Supply Voltage (Vsup): 3.6 V;

45 ns

10

100000000000000 Write/Erase Cycles

R-PDSO-G54

e3

22.225 mm

16777216 bit

MRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.194 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN

GULL WING

.8 mm

DUAL

10.16 mm