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Catalyst Semiconductor Flash Memory 4

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
CAT28F512H-12 by Catalyst Semiconductor

CAT28F512H-12

Catalyst Semiconductor

CAT28F512H-12 by Catalyst Semiconductor is a 64KX8 NOR Flash Memory with 524288 bit density. Operating at 5V, it offers 100000 Write/Erase Cycles and has a max access time of 120 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

2A

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

12

Not Qualified

1.2 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

8 mm

CAT28F512HI-90 by Catalyst Semiconductor

CAT28F512HI-90

Catalyst Semiconductor

CAT28F512HI-90 by Catalyst Semiconductor is a 64KX8 NOR type Flash Memory with 524288 bit density. Operating at 5V, it offers 100000 Write/Erase Cycles and has a max access time of 90ns. Ideal for industrial applications requiring reliable non-volatile memory solutions.

90 ns

YES

NO

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

2A

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

12

Not Qualified

1.2 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

8 mm

CAT28F512L-12 by Catalyst Semiconductor

CAT28F512L-12

Catalyst Semiconductor

CAT28F512L-12 by Catalyst Semiconductor is a 64Kx8 NOR Flash Memory with 100000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 120ns and supports asynchronous mode. Ideal for applications requiring high endurance and fast data access in commercial temperature environments.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDIP-T32

e3

42.03 mm

524288 bit

FLASH

8

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12

Not Qualified

5.08 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

NOR TYPE

15.24 mm

CAT28F512LI-12 by Catalyst Semiconductor

CAT28F512LI-12

Catalyst Semiconductor

CAT28F512LI-12 by Catalyst Semiconductor is a 64KX8 NOR type Flash Memory with 524288 bit memory density. Operating at 5V, it offers 100000 Write/Erase Cycles endurance and has a max access time of 120 ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDIP-T32

e3

42.03 mm

524288 bit

FLASH

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12

Not Qualified

5.08 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

NOR TYPE

15.24 mm