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DIP Flash Memory 11

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
W25Q128FVAIG by Winbond Electronics

W25Q128FVAIG

Winbond Electronics

W25Q128FVAIG by Winbond Electronics is a 128Mbit NOR flash memory with synchronous operation, SPI serial bus type, and 104MHz clock frequency. It has a package size of 9.27mm x 7.62mm x 5.33mm and is ideal for industrial applications requiring high endurance with 100000 write/erase cycles.

104 MHz

20

100000 Write/Erase Cycles

R-PDIP-T8

9.27 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

3

Not Qualified

5.33 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOR TYPE

7.62 mm

HARDWARE/SOFTWARE

AT29C010A-12PC by Atmel

AT29C010A-12PC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T32;

120 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0001 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C010A-12PI by Atmel

AT29C010A-12PI

Atmel

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Sector Size (Words): 8K,112K,8K;

120 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C010A-15PC by Atmel

AT29C010A-15PC

Atmel

Atmel's AT29C010A-15PC is a 128Kx8 NOR flash memory with 3-STATE output. Operating at 5V, it offers fast access time of 150ns and supports asynchronous mode. Widely used in commercial applications, this CMOS technology-based memory has a max write cycle time of 10ms.

150 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0001 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C040A-12PC by Atmel

AT29C040A-12PC

Atmel

Atmel's AT29C040A-12PC is a 512Kx8 NOR flash memory with 256-word page size, operating at 5V. It features asynchronous mode, 3-STATE output, and 10ms write cycle time. Widely used in commercial applications for data storage due to its fast access time of 120ns and low standby current of 0.0001Amp.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

4194304 bit

FLASH

8

1

2K

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

256

PARALLEL

5

5

Not Qualified

4.826 mm

256

.0001 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C040A-12PI by Atmel

AT29C040A-12PI

Atmel

AT29C040A-12PI by Atmel is a 512Kx8 NOR flash memory with 256-word page size. Operating at 5V, it has an access time of 120ns and supports asynchronous mode. Widely used in industrial applications for its 3-STATE output characteristics and toggle bit feature.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

4194304 bit

FLASH

8

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

256

PARALLEL

5

5

Not Qualified

4.826 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C256-12PI by Atmel

AT29C256-12PI

Atmel

Atmel's AT29C256-12PI is a 32KX8 NOR flash memory with 3-STATE output, operating at 5V. It has a page size of 64 words and offers fast access time of 120 ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PDIP-T28

e0

36.95 mm

262144 bit

FLASH

8

1

512

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

5.59 mm

64

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT49F002NT-90PC by Atmel

AT49F002NT-90PC

Atmel

Atmel's AT49F002NT-90PC is a 256Kx8 NOR flash memory with 262144 words. Operating at 5V, it offers fast access time of 90ns and low standby current of 0.0001Amp. Ideal for applications requiring high-speed data storage in commercial-grade environments.

90 ns

HARDWARE DATA PROTECTION

TOP

YES

YES

R-PDIP-T32

e0

42.05 mm

2097152 bit

FLASH

8

1

1

1,2,1,1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

5.59 mm

16K,8K,96K,128K

.0001 Amp

Flash Memories

90 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

AT29C010A-70PI by Atmel

AT29C010A-70PI

Atmel

AT29C010A-70PI by Atmel is a 128Kx8 NOR flash memory with 131072 words. It operates at 5V, has a max access time of 70ns, and supports asynchronous mode. Widely used in industrial applications for fast data storage and retrieval with parallel interface.

70 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

CAT28F512L-12 by Catalyst Semiconductor

CAT28F512L-12

Catalyst Semiconductor

CAT28F512L-12 by Catalyst Semiconductor is a 64Kx8 NOR Flash Memory with 100000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 120ns and supports asynchronous mode. Ideal for applications requiring high endurance and fast data access in commercial temperature environments.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDIP-T32

e3

42.03 mm

524288 bit

FLASH

8

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12

Not Qualified

5.08 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

NOR TYPE

15.24 mm

CAT28F512LI-12 by Catalyst Semiconductor

CAT28F512LI-12

Catalyst Semiconductor

CAT28F512LI-12 by Catalyst Semiconductor is a 64KX8 NOR type Flash Memory with 524288 bit memory density. Operating at 5V, it offers 100000 Write/Erase Cycles endurance and has a max access time of 120 ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDIP-T32

e3

42.03 mm

524288 bit

FLASH

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12

Not Qualified

5.08 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

NOR TYPE

15.24 mm