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STMicroelectronics EPROM 57

EPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Screening Level Maximum Seated Height Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
M27C1001-45XF1 by STMicroelectronics

M27C1001-45XF1

STMicroelectronics

M27C1001-45XF1 by STMicroelectronics is a 128KX8 EPROM with 45 ns access time, operating at 5V. It features a CMOS technology, through-hole terminal form, and 3-STATE output characteristics. Ideal for applications requiring fast memory access in commercial temperature environments.

45 ns

COMMON

R-CDIP-T32

e3

41.885 mm

1048576 bit

UVPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-70F1 by STMicroelectronics

M27C1001-70F1

STMicroelectronics

M27C1001-70F1 EPROM by STMicroelectronics features 128KX8 organization, 70 ns access time, and 1048576 bit memory density. It is ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

70 ns

COMMON

R-CDIP-T32

e3

41.885 mm

1048576 bit

UVPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C322-100F1 by STMicroelectronics

M27C322-100F1

STMicroelectronics

M27C322-100F1 by STMicroelectronics is a 2MX16 EPROM with 70ns access time, 5V supply voltage, and 3-state output. It is used in commercial applications requiring high memory density and parallel operation.

100 ns

COMMON

R-CDIP-T42

e3

54.635 mm

33554432 bit

UVPROM

16

1

42

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP42,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.71 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27V160-100XF1 by STMicroelectronics

M27V160-100XF1

STMicroelectronics

STMicroelectronics M27V160-100XF1 is a 1MX16 EPROM with 3.3V supply, 100ns access time, and 16-bit memory width. Ideal for commercial applications requiring reliable non-volatile memory storage in a ceramic-metal-sealed package.

100 ns

CONFIGURABLE AS 1M X 16

8

COMMON

R-CDIP-T42

e3

54.635 mm

16777216 bit

UVPROM

16

1

42

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP42,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

3.3

Not Qualified

5.71 mm

.00006 Amp

EPROMs

30 mA

3.465 V

3.135 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27V800-100F1 by STMicroelectronics

M27V800-100F1

STMicroelectronics

M27V800-100F1 EPROM by STMicroelectronics features 512KX16 organization, 100 ns access time, and 8388608 bit memory density. It is commonly used in commercial applications requiring a parallel interface for data transfer.

100 ns

CONFIGURABLE AS 512K X 16

8

COMMON

R-GDIP-T42

e0

54.635 mm

8388608 bit

UVPROM

16

1

42

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP42,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

3.3

Not Qualified

5.72 mm

.00002 Amp

EPROMs

30 mA

3.63 V

2.97 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27V322-100F1 by STMicroelectronics

M27V322-100F1

STMicroelectronics

The STMicroelectronics M27V322-100F1 is a 2MX16 EPROM with 3.3V supply, 100ns access time, and 42 terminals. It operates in asynchronous mode with a memory density of 33554432 bits. Ideal for commercial applications requiring fast data access and reliable memory storage.

100 ns

COMMON

R-CDIP-T42

e3

54.635 mm

33554432 bit

UVPROM

16

1

42

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP42,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

3.3

Not Qualified

5.72 mm

.00006 Amp

EPROMs

30 mA

3.63 V

2.97 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-45XF1 by STMicroelectronics

M27C256B-45XF1

STMicroelectronics

STMicroelectronics' M27C256B-45XF1 is a 32Kx8 EPROM with 45ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and asynchronous mode. Ideal for commercial applications requiring reliable non-volatile memory storage in a ceramic-metal-sealed package.

45 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.75

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C160-50F1 by STMicroelectronics

M27C160-50F1

STMicroelectronics

M27C160-50F1 by STMicroelectronics is a 16-bit EPROM with a 5V supply, featuring asynchronous operation and a max access time of 50 ns. It supports up to 1M words in a ceramic package, ideal for commercial applications. Its dual terminal form ensures reliable performance in various electronic devices.

50 ns

8

COMMON

R-CDIP-T42

e3

54.635 mm

16777216 bit

UVPROM

16

1

42

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP42,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.71 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C64A-10F1 by STMicroelectronics

M27C64A-10F1

STMicroelectronics

M27C64A-10F1 by STMicroelectronics is an 8KX8 EPROM with a memory density of 65536 bit. It operates at 5V, has a programming voltage of 12.5V, and features a max access time of 100 ns. Commonly used in commercial applications requiring non-volatile memory storage.

100 ns

COMMON

R-CDIP-T28

e3

36.92 mm

65536 bit

UVPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.5

Not Qualified

5.97 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm