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MILITARY EEPROM 11

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
25LC512-M/SN by Microchip Technology

25LC512-M/SN

Microchip Technology

25LC512-M/SN by Microchip is a serial EEPROM with 64KX8 organization, operating at up to 10 MHz. It has a MILITARY temperature grade and offers 1000000 Write/Erase cycles. Ideal for applications requiring reliable non-volatile memory in harsh environments.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-55 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

TS 16949

1.75 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

25LC512T-M/SN by Microchip Technology

25LC512T-M/SN

Microchip Technology

25LC512T-M/SN by Microchip Technology is a 64KX8 EEPROM with SPI serial bus type, operating at 5V. It offers 1000000 write/erase cycles, -55 to 125 °C temperature range, and synchronous operation. Ideal for applications requiring small outline package style and high endurance memory.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

EEPROM

8

3

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-55 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

5

TS 16949

1.75 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

24LC16B-M/SN by Microchip Technology

24LC16B-M/SN

Microchip Technology

24LC16B-M/SN by Microchip Technology is a 2Kx8 EEPROM with I2C control byte 1010MMMR. It operates at 5V, has 16384-bit memory density, and supports synchronous mode. Ideal for applications requiring high endurance, such as military-grade systems or hardware write protection.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e3

4.9 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-55 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

24LC16BT-M/SN by Microchip Technology

24LC16BT-M/SN

Microchip Technology

24LC16BT-M/SN by Microchip Technology is a 2Kx8 EEPROM with I2C control byte. Operating at 5V, it offers 1000000 write/erase cycles and -55 to 125 °C temp range. Ideal for military-grade applications requiring small outline package and synchronous operation up to 0.4 MHz clock frequency.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e3

4.9 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-55 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

XQ18V04VQ44N by Xilinx

XQ18V04VQ44N

Xilinx

CONFIGURATION MEMORY; Temperature Grade: MILITARY; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Maximum Seated Height: 1.2 mm;

20 MHz

10

20000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

125 Cel

-55 Cel

512KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

Flash Memories

50 mA

3.6 V

3 V

3.3

YES

CMOS

MILITARY

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

40k Rad(Si)

NOR TYPE

10 mm

25LC640A-M/SN by Microchip Technology

25LC640A-M/SN

Microchip Technology

25LC640A-M/SN by Microchip Technology is an EEPROM with 8KX8 organization, SPI serial bus type, and 10 MHz clock frequency. It operates at temperatures ranging from -55 to 125 °C and has a memory density of 65536 bit. Ideal for applications requiring high endurance and low standby current consumption.

2.5V TO 4.5V @ 5MHz

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-55 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

XQF32PVOG48M by Xilinx

XQF32PVOG48M

Xilinx

Xilinx XQF32PVOG48M is a 32MX1 NOR EEPROM with 33554432-bit memory density. Operating at 1.8V, it offers 20000 write/erase cycles and has a max access time of 30ns. Ideal for military-grade applications requiring configuration memory with small outline package style.

30 ns

20

20000 Write/Erase Cycles

R-PDSO-G48

e4

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

125 Cel

-55 Cel

32MX1

PLASTIC/EPOXY

SOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

260

1.8/3.3,1.8

Not Qualified

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

MILITARY

NICKEL PALLADIUM GOLD

GULL WING

.5 mm

DUAL

30

NOR TYPE

AT28C256-15DM/883-815 by Microchip Technology

AT28C256-15DM/883-815

Microchip Technology

AT28C256-15DM/883-815 by Microchip Technology is a MILITARY-grade EEPROM with 32KX8 organization, 150 ns access time, and 10 ms write cycle time. It operates at 5V with -55 to 125 °C temperature range. Ideal for applications requiring reliable non-volatile memory in harsh environments.

150 ns

R-GDIP-T28

e0

37.215 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

125 Cel

-55 Cel

32KX8

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

PARALLEL

5

MIL-STD-883 Class C

5.72 mm

5.5 V

4.5 V

5

NO

CMOS

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

10 ms

25LC512-E/SN16KVAO by Microchip Technology

25LC512-E/SN16KVAO

Microchip Technology

25LC512-E/SN16KVAO by Microchip Technology is a 64KX8 EEPROM with 3-STATE output, operating at up to 20 MHz. It features hardware/software write protection and offers endurance of 1M Write/Erase Cycles. Ideal for military-grade applications requiring reliable non-volatile memory storage in small outline packages.

2.5V TO 5.5V @ 10MHz

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

AEC-Q100

1.75 mm

SPI

.00001 Amp

10 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

25LC512T-E/SN16KVAO by Microchip Technology

25LC512T-E/SN16KVAO

Microchip Technology

25LC512T-E/SN16KVAO by Microchip Technology is a serial EEPROM with a memory density of 524288 bits. It operates at a max clock frequency of 20 MHz and has an endurance of 1,000,000 write/erase cycles. This EEPROM is commonly used in automotive applications due to its AEC-Q100 screening level and temperature grade.

2.5V TO 5.5V @ 10MHz

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

AEC-Q100

1.75 mm

SPI

.00001 Amp

10 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

AT28C256F-15DM/883-815 by Microchip Technology

AT28C256F-15DM/883-815

Microchip Technology

EEPROM; Temperature Grade: MILITARY; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 32KX8;

150 ns

AUTOMATIC WRITE

NO

YES

10

10000 Write/Erase Cycles

R-GDIP-T28

37.215 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

125 Cel

-55 Cel

32KX8

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

MIL-STD-883 Class B

5.72 mm

.0003 Amp

50 mA

5.5 V

4.5 V

5

NO

CMOS

MILITARY

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

3 ms