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DDR3 DRAM DRAM 74

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT41J512M8THU-187E:A by Micron Technology

MT41J512M8THU-187E:A

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 82; Package Code: LFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

533 MHz

COMMON

R-PBGA-B82

e1

15 mm

4294967296 bit

DDR3 DRAM

8

1

1

82

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

LFBGA

BGA82,11X13,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.35 mm

YES

.035 Amp

DRAMs

445 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

12.5 mm

MT41J64M16TW-093:J by Micron Technology

MT41J64M16TW-093:J

Micron Technology

MT41J64M16TW-093:J by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V nominal voltage, and operating temperature range of 0 to 85°C. It is commonly used in applications requiring synchronous operation and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

W632GG6NB-12 by Winbond Electronics

W632GG6NB-12

Winbond Electronics

The Winbond Electronics W632GG6NB-12 is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for synchronous multi-bank page burst applications. With a memory density of 2147483648 bits and 16-bit memory width, it offers high performance in compact dimensions.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

W632GG6NB12I by Winbond Electronics

W632GG6NB12I

Winbond Electronics

The Winbond Electronics W632GG6NB12I is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

W632GG6NB12J by Winbond Electronics

W632GG6NB12J

Winbond Electronics

Winbond Electronics' W632GG6NB12J is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style, suitable for industrial applications requiring high memory density and multi-bank page burst access mode. With a temperature range of -40 to 105°C, it offers synchronous operation in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

IS43TR16256B-125KBLI-TR by Integrated Silicon Solution

IS43TR16256B-125KBLI-TR

Integrated Silicon Solution

IS43TR16256B-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data access speeds.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

4,8

R-PBGA-B96

e1

13 mm

4294967296 bit

DDR3 DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

4,8

.029 Amp

1.425 V

276 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

9 mm

IS43TR16256A-125KBLI-TR by Integrated Silicon Solution

IS43TR16256A-125KBLI-TR

Integrated Silicon Solution

IS43TR16256A-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 1.5V supply voltage, operating at -40 to 95 °C. It features synchronous operation, common I/O type, and 4/8 sequential burst length. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

4, 8

R-PBGA-B96

13 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,6X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

4, 8

.057 Amp

1.425 V

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT44K16M36RB-093E:BTR by Micron Technology

MT44K16M36RB-093E:BTR

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Equivalence Code: BGA168,13X13,40;

MULTI BANK PAGE BURST

1075 MHz

COMMON

2,4

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR3 DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

100 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

2,4

.225 Amp

2840 mA

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093EIT:BTR by Micron Technology

MT44K16M36RB-093EIT:BTR

Micron Technology

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Interleaved Burst Length: 2,4;

MULTI BANK PAGE BURST

1075 MHz

COMMON

2,4

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR3 DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

100 Cel

-40 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

2,4

.225 Amp

2840 mA

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT41J64M16JT-15EIT:GTR by Micron Technology

MT41J64M16JT-15EIT:GTR

Micron Technology

Micron Technology's MT41J64M16JT-15EIT:GTR is a DDR3 DRAM with 64MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data access in thin profile devices.

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

IS43TR16128C-15HBL by Integrated Silicon Solution

IS43TR16128C-15HBL

Integrated Silicon Solution

IS43TR16128C-15HBL by Integrated Silicon Solution is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in electronic devices.

MULTI BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

R-PBGA-B96

e1

13 mm

2147483648 bit

DDR3 DRAM

16

3

1

1

96

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

9 mm

MT8KTF51264AZ-1G9P1 by Micron Technology

MT8KTF51264AZ-1G9P1

Micron Technology

Micron Technology's MT8KTF51264AZ-1G9P1 is a 512MX64 DDR3 DRAM with 64-bit memory width. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package has 240 terminals and supports single bank page burst access mode.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

34359738368 bit

DDR3 DRAM

64

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT18KSF1G72PDZ-1G6P1 by Micron Technology

MT18KSF1G72PDZ-1G6P1

Micron Technology

DDR3 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR3 DRAM

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

NOT SPECIFIED

4 mm

MT41J128M16HA-15E:DTR by Micron Technology

MT41J128M16HA-15E:DTR

Micron Technology

MT41J128M16HA-15E:DTR by Micron Technology is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41J256M16HA-093:ETR by Micron Technology

MT41J256M16HA-093:ETR

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41J512M8RH-093:ETR by Micron Technology

MT41J512M8RH-093:ETR

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

AS4C256M16D3A-12BIN by Alliance Memory

AS4C256M16D3A-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3A-12BIN is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

4294967296 bit

DDR3 DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

AS4C256M16D3B-12BIN by Alliance Memory

AS4C256M16D3B-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

13.5 mm

4294967296 bit

DDR3 DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT41J256M16HA-125:ETR by Micron Technology

MT41J256M16HA-125:ETR

Micron Technology

Micron Technology's MT41J256M16HA-125:ETR is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 4Gb. Suitable for applications requiring high-speed data processing in devices like computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

AS4C256M16D3B-12BINTR by Alliance Memory

AS4C256M16D3B-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

4,8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR3 DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

4,8

.032 Amp

1.425 V

55 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

IS46TR16640CL-107MBLA2 by Integrated Silicon Solution

IS46TR16640CL-107MBLA2

Integrated Silicon Solution

IS46TR16640CL-107MBLA2 by Integrated Silicon Solution is a 64MX16 DDR3 DRAM with 1.35V supply voltage, operating in synchronous mode with self-refresh capability. It features a memory density of 1073741824 bits and is suitable for industrial applications requiring multi-bank page burst access mode at temperatures ranging from -40 to 105°C.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

W631GG6NB-12 by Winbond Electronics

W631GG6NB-12

Winbond Electronics

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

20 ns

800 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.04 Amp

220 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

W631GG6NB09I by Winbond Electronics

W631GG6NB09I

Winbond Electronics

Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.

MULTI BANK PAGE BURST

20 ns

1066 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.05 Amp

270 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GG6NB12I by Winbond Electronics

W631GG6NB12I

Winbond Electronics

W631GG6NB12I by Winbond Electronics is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz clock frequency. It features a 1.5V nominal voltage and offers a memory density of 1073741824 bits. This industrial-grade DRAM is suitable for applications requiring high-speed synchronous memory operations.

MULTI BANK PAGE BURST

20 ns

800 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.04 Amp

220 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GG6NB11I by Winbond Electronics

W631GG6NB11I

Winbond Electronics

Winbond Electronics' W631GG6NB11I is a DDR3 DRAM with 64MX16 organization, operating at up to 933 MHz. It features a very thin profile grid array package and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MULTI BANK PAGE BURST

20 ns

933 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.045 Amp

240 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GG6NB-09 by Winbond Electronics

W631GG6NB-09

Winbond Electronics

Winbond Electronics' W631GG6NB-09 is a DDR3 DRAM with 64MX16 organization, operating at 1066 MHz. It features a 1.5V nominal voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in devices with limited space constraints.

MULTI BANK PAGE BURST

20 ns

1066 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.05 Amp

270 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm