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Infineon Technologies Varactor Diodes 69

Varactor Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Variable Capacitance Diode Classification
BBY52-02W-E6327 by Infineon Technologies

BBY52-02W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 1.85 pF; Maximum Repetitive Peak Reverse Voltage: 7 V; Moisture Sensitivity Level (MSL): 1;

1.85 pF

VARIABLE CAPACITANCE DIODE

1

260

7 V

Varactors

YES

BBY57-02V-E6327 by Infineon Technologies

BBY57-02V-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 10 V; Nominal Diode Capacitance: 17.5 pF; Moisture Sensitivity Level (MSL): 1;

17.5 pF

VARIABLE CAPACITANCE DIODE

1

260

10 V

Varactors

YES

BBY53-02W-E6327 by Infineon Technologies

BBY53-02W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 5.3 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

5.3 pF

VARIABLE CAPACITANCE DIODE

1

260

6 V

Varactors

YES

BBY58-02W-E6327 by Infineon Technologies

BBY58-02W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 18.3 pF;

18.3 pF

VARIABLE CAPACITANCE DIODE

1

150 Cel

-55 Cel

260

10 V

Varactors

YES

BB555-E7902 by Infineon Technologies

BB555-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.7 pF; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 35 V; Moisture Sensitivity Level (MSL): 1;

18.7 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB555-E7912 by Infineon Technologies

BB555-E7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 18.7 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

18.7 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB555-02VE7902 by Infineon Technologies

BB555-02VE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 18.7 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; Peak Reflow Temperature (C): 260;

18.7 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB555-02VE7912 by Infineon Technologies

BB555-02VE7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 18.7 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

18.7 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB659-E7902 by Infineon Technologies

BB659-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; Nominal Diode Capacitance: 38.3 pF; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

38.3 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB565-E7902 by Infineon Technologies

BB565-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 20 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

20 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB565-E7908 by Infineon Technologies

BB565-E7908

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 20 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; Moisture Sensitivity Level (MSL): 1;

20 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB659CE7902 by Infineon Technologies

BB659CE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 39 pF; Maximum Repetitive Peak Reverse Voltage: 30 V;

39 pF

VARIABLE CAPACITANCE DIODE

1

260

30 V

Varactors

YES

BB659CE7912 by Infineon Technologies

BB659CE7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 39 pF; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 30 V;

39 pF

VARIABLE CAPACITANCE DIODE

1

260

30 V

Varactors

YES

BB659C-02VE7902 by Infineon Technologies

BB659C-02VE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 39 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Peak Reflow Temperature (C): 260;

39 pF

VARIABLE CAPACITANCE DIODE

1

260

30 V

Varactors

YES

BB659C-02VE7912 by Infineon Technologies

BB659C-02VE7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 30 V; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 39 pF;

39 pF

VARIABLE CAPACITANCE DIODE

1

260

30 V

Varactors

YES

BB664-E7902 by Infineon Technologies

BB664-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 35 V; Nominal Diode Capacitance: 41.8 pF;

41.8 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB689-E7902 by Infineon Technologies

BB689-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 56.5 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

56.5 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB689-E7908 by Infineon Technologies

BB689-E7908

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Maximum Repetitive Peak Reverse Voltage: 35 V; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 56.5 pF;

56.5 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB689-E7903 by Infineon Technologies

BB689-E7903

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 56.5 pF; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 35 V; Moisture Sensitivity Level (MSL): 1;

56.5 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB857-E7902 by Infineon Technologies

BB857-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Maximum Repetitive Peak Reverse Voltage: 35 V; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 6.6 pF;

6.6 pF

VARIABLE CAPACITANCE DIODE

1

260

35 V

Varactors

YES

BB659C-02V-H7902 by Infineon Technologies

BB659C-02V-H7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 39 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Moisture Sensitivity Level (MSL): 1;

39 pF

VARIABLE CAPACITANCE DIODE

e3

1

260

30 V

Varactors

YES

MATTE TIN

BB833E6327HTSA1 by Infineon Technologies

BB833E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

35 V

SINGLE

8.11 %

11

9.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

S BAND

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

TIN

GULL WING

DUAL

BB545E7904HTSA1 by Infineon Technologies

BB545E7904HTSA1

Infineon Technologies

Infineon's BB545E7904HTSA1 is a single varactor diode with 20pF capacitance, ideal for ultra high frequency applications. With a temperature range of -55 to 150°C, it features gull wing terminals and silicon element material. This surface mount diode has a small outline package shape and is suitable for RF tuning in various electronic devices.

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

BB55502VH7902XTSA1 by Infineon Technologies

BB55502VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

30 V

SINGLE

6.67 %

6

18.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB555H7902XTSA1 by Infineon Technologies

BB555H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

30 V

SINGLE

6.67 %

6

18.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB56502VH7902XTSA1 by Infineon Technologies

BB56502VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB565H7902XTSA1 by Infineon Technologies

BB565H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB639CE7904HTSA1 by Infineon Technologies

BB639CE7904HTSA1

Infineon Technologies

Infineon's BB639CE7904HTSA1 is a single varactor diode with 39pF capacitance, 35V breakdown voltage, and 9.5 capacitance ratio. Ideal for very high frequency applications in small outline packages, operating b/w -55°C to 150°C.

35 V

SINGLE

7.01 %

9.5

39 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

BB644E7904HTSA1 by Infineon Technologies

BB644E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

6.59 %

11

41.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

MATTE TIN

GULL WING

DUAL

BB659CH7902XTSA1 by Infineon Technologies

BB659CH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

35 V

SINGLE

7.01 %

9.5

39 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB659H7902XTSA1 by Infineon Technologies

BB659H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

30 V

SINGLE

5.26 %

9.8

38.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB66402VH7902XTSA1 by Infineon Technologies

BB66402VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

6.59 %

11

41.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB664H7902XTSA1 by Infineon Technologies

BB664H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

6.59 %

11

41.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB669E7904HTSA1 by Infineon Technologies

BB669E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 2%

SINGLE

9.33 %

14.5

56.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

BB68902VH7902XTSA1 by Infineon Technologies

BB68902VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 2%

SINGLE

9.33 %

14.5

56.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB689H7902XTSA1 by Infineon Technologies

BB689H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 2%

SINGLE

9.33 %

14.5

56.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB831E7904HTSA1 by Infineon Technologies

BB831E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 3%

SINGLE

11.36 %

7.8

8.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

L BAND

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

MATTE TIN

GULL WING

DUAL

BB857H7902XTSA1 by Infineon Technologies

BB857H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

9.09 %

9.7

6.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

ABRUPT

BBY5202LE6327XTMA1 by Infineon Technologies

BBY5202LE6327XTMA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

22.22 %

1.1

1.85 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-XBCC-N2

1

2

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

YES

NO LEAD

BOTTOM

HYPERABRUPT

BBY5202WH6327XTSA1 by Infineon Technologies

BBY5202WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

7 V

SINGLE

22.22 %

1.1

1.85 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

HYPERABRUPT

BBY5302LE6327XTMA1 by Infineon Technologies

BBY5302LE6327XTMA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

SINGLE

9.43 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-XBCC-N2

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

YES

NO LEAD

BOTTOM

HYPERABRUPT

BBY5302WH6327XTSA1 by Infineon Technologies

BBY5302WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

SINGLE

9.43 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

HYPERABRUPT

BBY5502WH6327XTSA1 by Infineon Technologies

BBY5502WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

16 V

SINGLE

5.66 %

2

18.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

HYPERABRUPT

BBY5802WH6327XTSA1 by Infineon Technologies

BBY5802WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

SINGLE

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

HYPERABRUPT

BBY5803WE6327HTSA1 by Infineon Technologies

BBY5803WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

SINGLE

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY5805WH6327XTSA1 by Infineon Technologies

BBY5805WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

COMMON CATHODE, 2 ELEMENTS

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY5806WH6327XTSA1 by Infineon Technologies

BBY5806WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

COMMON ANODE, 2 ELEMENTS

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY6605WH6327XTSA1 by Infineon Technologies

BBY6605WH6327XTSA1

Infineon Technologies

Infineon's BBY6605WH6327XTSA1 is a varactor diode with common cathode, 2 elements. It has a nominal capacitance of 68.7 pF and min breakdown voltage of 12 V. Ideal for applications requiring hyperabrupt variable capacitance diodes in small outline packages.

HIGH Q

12 V

COMMON CATHODE, 2 ELEMENTS

4 %

5

68.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

HYPERABRUPT