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Infineon Technologies Varactor Diodes 69

Varactor Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Variable Capacitance Diode Classification
BBY57-02WE6327 by Infineon Technologies

BBY57-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

10 V

SINGLE

5.98 %

3

17.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

FLAT

DUAL

HYPERABRUPT

BBY56-02WE6327 by Infineon Technologies

BBY56-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

10 V

SINGLE

7.5 %

2.15

40 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

FLAT

DUAL

BBY53-03LRHE6327 by Infineon Technologies

BBY53-03LRHE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: 5.3 pF;

5.3 pF

VARIABLE CAPACITANCE DIODE

260

6 V

Varactors

YES

BB555E7908 by Infineon Technologies

BB555E7908

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 18.7 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;

18.7 pF

VARIABLE CAPACITANCE DIODE

260

35 V

Varactors

YES

BBY66-05E6327 by Infineon Technologies

BBY66-05E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 68.7 pF; Maximum Repetitive Peak Reverse Voltage: 12 V;

68.7 pF

VARIABLE CAPACITANCE DIODE

260

12 V

Varactors

YES

BBY53-02VE6327 by Infineon Technologies

BBY53-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 5.3 pF; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Repetitive Peak Reverse Voltage: 6 V;

5.3 pF

VARIABLE CAPACITANCE DIODE

1

260

6 V

Varactors

YES

BBY66-02VE6327 by Infineon Technologies

BBY66-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: 68.7 pF;

68.7 pF

VARIABLE CAPACITANCE DIODE

1

260

Varactors

YES

BBY51-02LE6327 by Infineon Technologies

BBY51-02LE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

6.48 %

1.55

5.4 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-XBCC-N2

e3

1

2

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

7 V

Varactors

YES

MATTE TIN

NO LEAD

BOTTOM

HYPERABRUPT

BBY51-02WE6327 by Infineon Technologies

BBY51-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

6.48 %

1.55

5.4 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

7 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY55-02VE6327 by Infineon Technologies

BBY55-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

16 V

SINGLE

5.66 %

2

18.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

16 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY55-02WE6327 by Infineon Technologies

BBY55-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

16 V

SINGLE

5.66 %

2

18.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

16 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY59-02VE6327 by Infineon Technologies

BBY59-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

15 V

SINGLE

4.32 %

3.4

27.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY65-02VE6327 by Infineon Technologies

BBY65-02VE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

15 V

SINGLE

4.41 %

10

29.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Varactors

YES

MATTE TIN

FLAT

DUAL

HYPERABRUPT

BBY5305WE6327HTSA1 by Infineon Technologies

BBY5305WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

COMMON CATHODE, 2 ELEMENTS

9.43 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY6605WE6327HTSA1 by Infineon Technologies

BBY6605WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH Q

12 V

COMMON CATHODE, 2 ELEMENTS

4 %

5

68.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BB565H7903XTMA1 by Infineon Technologies

BB565H7903XTMA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BB565H7908XTSA1 by Infineon Technologies

BB565H7908XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BB565H7912XTSA1 by Infineon Technologies

BB565H7912XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BB689H7908XTSA1 by Infineon Technologies

BB689H7908XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 2%

SINGLE

9.33 %

14.5

56.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BBY5705WE6327HTSA1 by Infineon Technologies

BBY5705WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH Q, LOW INDUCTANCE

10 V

COMMON CATHODE, 2 ELEMENTS

5.98 %

3

17.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

GULL WING

DUAL

NOT SPECIFIED

HYPERABRUPT

BBY58-02V-E6327 by Infineon Technologies

BBY58-02V-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

10 V

SINGLE

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

10 V

Varactors

YES

FLAT

DUAL

HYPERABRUPT