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BOTTOM PIN Diodes 13

PIN Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Maximum Diode Forward Resistance Diode Resistive Test Current Diode Resistive Test Frequency Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Nominal Minority Carrier Lifetime Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
BAR8802LRHE6327XTSA1 by Infineon Technologies

BAR8802LRHE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

SWITCHING

80 V

SINGLE

.4 pF

SILICON

2.5 ohm

PIN DIODE

L BAND

R-XBCC-N2

e4

.5 us

1

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GOLD

NO LEAD

BOTTOM

BAR9002LRHE6327XTSA1 by Infineon Technologies

BAR9002LRHE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

80 V

SINGLE

.35 pF

SILICON

2.3 ohm

PIN DIODE

L BAND

R-XBCC-N2

.75 us

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

NOT SPECIFIED

BAR9002LSE6327XTSA1 by Infineon Technologies

BAR9002LSE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

80 V

SINGLE

.35 pF

SILICON

2.3 ohm

PIN DIODE

L BAND

R-XBCC-N2

.75 us

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.15 W

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

BAP63LX,315 by NXP Semiconductors

BAP63LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.3 pF

.34 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

e3

.32 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.135 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP55L,315 by NXP Semiconductors

BAP55L,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

SINGLE

.28 pF

SILICON

.7 ohm

PIN DIODE

S BAND

R-PBCC-N2

e3

.28 us

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.5 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP51L,315 by NXP Semiconductors

BAP51L,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.4 pF

SILICON

1.5 ohm

PIN DIODE

S BAND

R-PBCC-N2

e3

.55 us

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.5 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP142LX,315 by NXP Semiconductors

BAP142LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.26 pF

.25 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

e3

.11 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

.13 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Tin (Sn)

NO LEAD

BOTTOM

30

BAP1321LX,315 by NXP Semiconductors

BAP1321LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.38 pF

.32 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

.48 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.13 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

SMP1345-518 by Skyworks Solutions

SMP1345-518

Skyworks Solutions

SMP1345-518 by Skyworks Solutions is a PIN diode with 4 elements in a ring configuration. It operates in the C band frequency range and has a max diode capacitance of 0.2 pF. This diode is commonly used in attenuator and switching applications due to its low forward resistance of 2 ohm.

ATTENUATOR; SWITCHING

ISOLATED

RING, 4 ELEMENTS

.2 pF

SILICON

2 ohm

PIN DIODE

C BAND

R-PBGA-B4

.1 us

1

4

4

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

260

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

BUTT

BOTTOM

30

MPN3404G by Onsemi

MPN3404G

Onsemi

The Onsemi MPN3404G is a PIN diode with very high frequency band, 2 pF diode capacitance, and 0.85 ohm forward resistance. Ideal for switching applications, it operates at up to 125 °C with a breakdown voltage of 20V.

HIGH VOLTAGE

SWITCHING

20 V

SINGLE

2 pF

1.3 pF

SILICON

.85 ohm

10 mA

PIN DIODE

VERY HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.4 W

Not Qualified

15 V

PIN Diodes

NO

POSITIVE-INTRINSIC-NEGATIVE

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

MPN3700G by Onsemi

MPN3700G

Onsemi

The Onsemi MPN3700G is a PIN diode with 1 pF capacitance, 20 V reverse voltage, and 1 ohm forward resistance. It is used for very high frequency switching applications at up to 125 °C. The diode features a cylindrical package with tin silver copper finish and silicon element material.

HIGH VOLTAGE

SWITCHING

200 V

SINGLE

1 pF

1 pF

SILICON

1 ohm

10 mA

PIN DIODE

VERY HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

20 V

PIN Diodes

NO

POSITIVE-INTRINSIC-NEGATIVE

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

MADP-030025-13140P by M/a-com Technology Solutions

MADP-030025-13140P

M/a-com Technology Solutions

MADP-030025-13140P by M/a-com: PIN Diode with 0.56 pF capacitance, 0.65 ohm forward resistance, and 2.8 us carrier lifetime. Ideal for switching applications at up to 175°C operating temperature. Chip carrier package in glass material for surface mount configuration.

SWITCHING

ISOLATED

SINGLE

.56 pF

SILICON

.65 ohm

PIN DIODE

R-LBCC-N2

2.8 us

1

2

175 Cel

GLASS

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

NOT SPECIFIED

MPL4700-206/TR by Microchip Technology

MPL4700-206/TR

Microchip Technology

MPL4700-206/TR by Microchip is a single PIN diode for X band applications. With a max capacitance of 0.15 pF, forward resistance of 2 ohm, and breakdown voltage of 25V, it operates from -55 to 150°C. Ideal for RF switches and attenuators in communication systems.

25 V

SINGLE

.15 pF

SILICON

2 ohm

10 mA

PIN DIODE

X BAND

R-XBCC-N2

1

2

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM