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Infineon Technologies Microwave Mixer & Detector Diodes 20

Microwave Mixer & Detector Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band Maximum Impedance Minimum Impedance JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Minimum Tangential Signal Sensitivity Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Schottky Barrier Type
BAT15-099LRH-E6327 by Infineon Technologies

BAT15-099LRH-E6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Schottky Barrier Type: LOW BARRIER; No. of Elements: 2;

4 V

.35 pF

SILICON

MIXER DIODE

.41 V

X BAND

1

2

150 Cel

-55 Cel

.11 A

260

.1 W

Other Diodes

YES

SCHOTTKY

LOW BARRIER

BA892H6327XTSA1 by Infineon Technologies

BA892H6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BA892H6433XTMA1 by Infineon Technologies

BA892H6433XTMA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BA892H6127XTSA1 by Infineon Technologies

BA892H6127XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BA892H6770XTSA1 by Infineon Technologies

BA892H6770XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BAT6202WH6327XTSA1 by Infineon Technologies

BAT6202WH6327XTSA1

Infineon Technologies

Infineon's BAT6202WH6327XTSA1 is a Schottky mixer diode with low barrier type, operating at ultra high frequency. With a max forward voltage of 1V and output current of 0.02A, it is suitable for microwave applications requiring small outline surface mount packages. The diode's max power dissipation is 0.1W, making it ideal for high temperature environments up to 150°C.

SINGLE

.6 pF

SILICON

MIXER DIODE

1 V

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

150 Cel

.02 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.1 W

40 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

LOW BARRIER

BA89202VH6327XTSA1 by Infineon Technologies

BA89202VH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

TIN

FLAT

DUAL

BAT1504RE6327HTSA1 by Infineon Technologies

BAT1504RE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.25 pF

SILICON

MIXER DIODE

X BAND

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

SCHOTTKY

GULL WING

DUAL

LOW BARRIER

BAT1705E6327HTSA1 by Infineon Technologies

BAT1705E6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

.75 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT1706WH6327XTSA1 by Infineon Technologies

BAT1706WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

.75 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT6202LE6327XTMA1 by Infineon Technologies

BAT6202LE6327XTMA1

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Diode Element Material: SILICON; No. of Elements: 1; Maximum Output Current: .02 A;

SINGLE

SILICON

MIXER DIODE

1 V

1

150 Cel

.02 A

NOT SPECIFIED

40 V

Rectifier Diodes

YES

SCHOTTKY

NOT SPECIFIED

BAT6207WH6327XTSA1 by Infineon Technologies

BAT6207WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

TR, 7 INCH : 3000

SEPARATE, 2 ELEMENTS

.6 pF

SILICON

MIXER DIODE

1 V

R-PDSO-G4

2

4

150 Cel

.02 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.1 W

10 uA

40 V

YES

SCHOTTKY

GULL WING

DUAL

LOW BARRIER

BAT6806E6327HTSA1 by Infineon Technologies

BAT6806E6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT6806WH6327XTSA1 by Infineon Technologies

BAT6806WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT15-07LRHE6327 by Infineon Technologies

BAT15-07LRHE6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Technology: SCHOTTKY; Schottky Barrier Type: LOW BARRIER; Maximum Output Current: .11 A;

4 V

.35 pF

SILICON

MIXER DIODE

.41 V

X BAND

150 Cel

-55 Cel

.11 A

.1 W

Other Diodes

YES

SCHOTTKY

LOW BARRIER

BAT1704WE6327HTSA1 by Infineon Technologies

BAT1704WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.75 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.15 W

YES

SCHOTTKY

GULL WING

DUAL

NOT SPECIFIED

BAT1705WE6327HTSA1 by Infineon Technologies

BAT1705WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

.75 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.15 W

YES

SCHOTTKY

GULL WING

DUAL

NOT SPECIFIED

BAT6307WE6327HTSA1 by Infineon Technologies

BAT6307WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH SPEED

CATHODE

SEPARATE, 2 ELEMENTS

.85 pF

SILICON

MIXER DIODE

R-PDSO-G4

2

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.1 W

YES

SCHOTTKY

GULL WING

DUAL

LOW BARRIER

BAT6806WE6327HTSA1 by Infineon Technologies

BAT6806WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT1502ELSE6327XTSA1 by Infineon Technologies

BAT1502ELSE6327XTSA1

Infineon Technologies

BAT1502ELSE6327XTSA1 by Infineon Technologies is a single-config microwave mixer diode for X Band applications. With a max diode capacitance of 0.23 pF, it operates in temperatures ranging from -55 to 150 °C. Utilizing Schottky technology with low barrier type, it has a max forward voltage of 0.41 V and output current of 0.11 A.

4 V

SINGLE

.23 pF

SILICON

MIXER DIODE

.41 V

X BAND

R-XBCC-N2

e4

1

1

2

150 Cel

-55 Cel

.11 A

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.1 W

5 uA

1 V

YES

SCHOTTKY

GOLD

NO LEAD

BOTTOM

LOW BARRIER