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Genesic Semiconductor Diodes & Rectifiers 16

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
GB02SLT12-252 by Genesic Semiconductor

GB02SLT12-252

Genesic Semiconductor

GB02SLT12-252 by Genesic Semiconductor is a Schottky rectifier diode with max VF of 1.8V and max output current of 2A. It operates at up to 175°C, has a VRRM of 1200V, and handles peak forward current up to 18A. Ideal for high-power applications requiring efficient rectification in compact spaces.

SINGLE

RECTIFIER DIODE

1.8 V

18 A

1

1

175 Cel

2 A

1200 V

Rectifier Diodes

YES

SCHOTTKY

GAP3SLT33-220FP by Genesic Semiconductor

GAP3SLT33-220FP

Genesic Semiconductor

GAP3SLT33-220FP by Genesic Semiconductor is a SCHOTTKY RECTIFIER DIODE with 2.2V VF, 3300V VRRM, and 0.3A IO. It operates at up to 175°C and is ideal for high-voltage applications requiring efficient rectification with low forward voltage drop.

SINGLE

RECTIFIER DIODE

2.2 V

2 A

1

1

175 Cel

.3 A

3300 V

Rectifier Diodes

NO

SCHOTTKY

GB01SLT12-252 by Genesic Semiconductor

GB01SLT12-252

Genesic Semiconductor

GB01SLT12-252 by Genesic Semiconductor is a Schottky rectifier diode with a max power dissipation of 42W. It operates b/w -55°C to 175°C, making it suitable for high-temperature applications. With a gull wing terminal form and small outline package style, it is ideal for surface mount designs.

PD-CASE

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

TO-252

R-PSSO-G2

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

42 W

YES

SCHOTTKY

GULL WING

SINGLE

NOT SPECIFIED

GB02SLT12-220 by Genesic Semiconductor

GB02SLT12-220

Genesic Semiconductor

GB02SLT12-220 by Genesic Semiconductor is a Schottky rectifier diode with 1200V peak reverse voltage and 2A output current. It has a max power dissipation of 65W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures performance in temperatures ranging from -55 to 175°C.

PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-220AC

R-PSFM-T2

15 A

1

1

2

175 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

65 W

1200 V

50 uA

NO

SCHOTTKY

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GB10SLT12-220 by Genesic Semiconductor

GB10SLT12-220

Genesic Semiconductor

GB10SLT12-220 by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse voltage and 10A output current. It has a max power dissipation of 190W and operates b/w -55 to 175°C. Ideal for efficiency applications, this diode features silicon carbide material in a flange mount package style.

PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-220AC

R-PSFM-T2

55 A

1

1

2

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

190 W

1200 V

50 uA

NO

SCHOTTKY

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GB10MPS17-247 by Genesic Semiconductor

GB10MPS17-247

Genesic Semiconductor

GB10MPS17-247 by Genesic Semiconductor is a single rectifier diode with 1700V peak reverse voltage and 426W power dissipation. It operates b/w -55 to 175 °C, ideal for efficiency applications. The diode features silicon carbide technology, with a max forward voltage of 1.8V and low reverse current of 12uA.

FREE WHEELING DIODE, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-247

R-PSFM-T2

50 A

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

426 W

1700 V

12 uA

NO

AVALANCHE

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GB2X100MPS12-227 by Genesic Semiconductor

GB2X100MPS12-227

Genesic Semiconductor

GB2X100MPS12-227 by Genesic Semiconductor is a Schottky rectifier diode with 1200V peak reverse voltage and 228A output current. It has a max power dissipation of 1554W, making it suitable for high-efficiency applications. With silicon carbide material, this diode operates b/w -55°C to 175°C, ideal for demanding environments.

FREE WHEELING DIODE, PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

640 A

2

1

4

175 Cel

-55 Cel

228 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

1554 W

1200 V

50 uA

NO

SCHOTTKY

UNSPECIFIED

UPPER

NOT SPECIFIED

GC08MPS12-252 by Genesic Semiconductor

GC08MPS12-252

Genesic Semiconductor

GC08MPS12-252 by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage and 25A output current. It has a max power dissipation of 219W, making it suitable for high-efficiency applications. With a temperature range from -55 to 175°C, this diode offers reliable performance in various environments.

FREE WHEELING DIODE, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-252

R-PSSO-G2

75 A

1

1

2

175 Cel

-55 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

219 W

1200 V

5 uA

1200 V

YES

SCHOTTKY

GULL WING

SINGLE

GD2X75MPS17N by Genesic Semiconductor

GD2X75MPS17N

Genesic Semiconductor

GD2X75MPS17N by Genesic Semiconductor is a Schottky rectifier diode with 1700V reverse test voltage and 115A output current. It has a max power dissipation of 1112W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures superior performance in a wide temperature range from -55 to 175°C.

PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

750 A

2

1

4

175 Cel

-55 Cel

115 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

1112 W

1700 V

10 uA

1700 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

GD2X30MPS12N by Genesic Semiconductor

GD2X30MPS12N

Genesic Semiconductor

GD2X30MPS12N by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage and 49A output current. It has a max power dissipation of 382W, making it suitable for high-efficiency applications. With silicon carbide diode element material, it operates b/w -55°C to 175°C efficiently.

FREE WHEELING DIODE, PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

300 A

2

1

4

175 Cel

-55 Cel

49 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

382 W

1200 V

10 uA

1200 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

GD2X100MPS12N by Genesic Semiconductor

GD2X100MPS12N

Genesic Semiconductor

GD2X100MPS12N by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage and 136A output current. It has a max power dissipation of 940W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures reliable performance in temperatures ranging from -55 to 175°C.

PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

1000 A

2

1

4

175 Cel

-55 Cel

136 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

940 W

1200 V

25 uA

1200 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

GD60MPS17H by Genesic Semiconductor

GD60MPS17H

Genesic Semiconductor

GD60MPS17H by Genesic Semiconductor is a single Schottky rectifier diode with a max reverse voltage of 1700V and output current of 122A. It has a max power dissipation of 825W, making it suitable for high-efficiency applications. With silicon carbide diode element material, it operates b/w -55°C to 175°C efficiently.

PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-247

R-PSFM-T2

600 A

1

1

2

175 Cel

-55 Cel

122 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

825 W

1700 V

40 uA

1700 V

NO

SCHOTTKY

THROUGH-HOLE

SINGLE

GC50MPS06-247 by Genesic Semiconductor

GC50MPS06-247

Genesic Semiconductor

GC50MPS06-247 by Genesic Semiconductor is a single Schottky rectifier diode with 650V reverse test voltage and 86A output current. It has a max power dissipation of 454W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures performance in temperatures ranging from -55 to 175°C.

FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-247

R-PSFM-T2

400 A

1

1

2

175 Cel

-55 Cel

86 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

454 W

650 V

5 uA

650 V

NO

SCHOTTKY

THROUGH-HOLE

SINGLE

GB50MPS17-247 by Genesic Semiconductor

GB50MPS17-247

Genesic Semiconductor

GB50MPS17-247 by Genesic Semiconductor is a single Schottky rectifier diode with a max output current of 99A and a max reverse test voltage of 1700V. It is designed for efficiency applications, with a package style of flange mount and a max power dissipation of 688W.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-247

R-PSFM-T2

540 A

1

1

2

175 Cel

-55 Cel

99 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

688 W

1700 V

20 uA

1700 V

NO

SCHOTTKY

THROUGH-HOLE

SINGLE

GC20MPS12-247 by Genesic Semiconductor

GC20MPS12-247

Genesic Semiconductor

GC20MPS12-247 by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage, 40A output current, and 245W power dissipation. It is used for efficiency applications in a temperature range of -55 to 175°C.

FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-247

R-PSFM-T2

200 A

1

1

2

175 Cel

-55 Cel

40 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

245 W

1200 V

10 uA

1200 V

NO

SCHOTTKY

THROUGH-HOLE

SINGLE

GC10MPS12-220 by Genesic Semiconductor

GC10MPS12-220

Genesic Semiconductor

GC10MPS12-220 by Genesic Semiconductor is a single Schottky rectifier diode with a max reverse voltage of 1200V and output current of 25A. It has a max power dissipation of 181W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures reliable performance in temperatures ranging from -55°C to 175°C.

FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-220AC

R-PSFM-T2

100 A

1

1

2

175 Cel

-55 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

181 W

1200 V

5 uA

1200 V

NO

SCHOTTKY

THROUGH-HOLE

SINGLE