Loading...

QUAD Diodes & Rectifiers 2

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Maximum Limiting Voltage Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Nominal Reference Voltage Nominal Regulation Current (Ireg) Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
NIS6111QPT1 by Onsemi

NIS6111QPT1

Onsemi

NIS6111QPT1 by Onsemi is a RECTIFIER DIODE with 30A output current and 1.2V forward voltage, ideal for EFFICIENCY applications. It has a max reverse recovery time of 0.0365us and operates at up to 125 °C temperature, featuring a PLASTIC/EPOXY package body material in SQUARE shape.

EFFICIENCY

COMPLEX

SILICON

RECTIFIER DIODE

1.2 V

S-PQCC-N11

e0

1

90 A

1

1

11

125 Cel

30 A

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

235

Not Qualified

24 V

.0365 us

Rectifier Diodes

YES

Tin/Lead (Sn/Pb)

NO LEAD

QUAD

30

NIS6111QPT1G by Onsemi

NIS6111QPT1G

Onsemi

NIS6111QPT1G by Onsemi is a RECTIFIER DIODE with 30 A output current and 24 V peak reverse voltage. It has a max forward voltage of 1.2 V and operates at up to 125 °C. Ideal for applications requiring high efficiency, this chip carrier diode is surface mountable in complex configurations.

EFFICIENCY

COMPLEX

SILICON

RECTIFIER DIODE

1.2 V

S-PQCC-N11

e3

1

90 A

1

1

11

125 Cel

30 A

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

260

Not Qualified

24 V

Rectifier Diodes

YES

TIN

NO LEAD

QUAD

30