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NIS6111QPT1

Onsemi

NIS6111QPT1 by Onsemi

NIS6111QPT1 by Onsemi is a RECTIFIER DIODE with 30A output current and 1.2V forward voltage, ideal for EFFICIENCY applications. It has a max reverse recovery time of 0.0365us and operates at up to 125 °C temperature, featuring a PLASTIC/EPOXY package body material in SQUARE shape.

Median Price

$1.880

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 41,688 parts In-Stock

1+ parts

-

100+ parts

$1.880

1k+ parts

$1.680

10k+ parts

$1.580

41,688

-

$1.880

$1.680

$1.580

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,521 parts In-Stock

1+ parts

$1.986

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-

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1,521

$1.986

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Vyrian

USA . 2,199 parts In-Stock

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2,199

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R&J Components

USA . 68 parts In-Stock

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68

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Sunrise Surplus Inc.

USA . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,372 parts In-Stock

1+ parts

$1.881

100+ parts

-

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2,372

$1.881

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Vigor

Singapore . 283 parts In-Stock

1+ parts

$2.010

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283

$2.010

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Corohmni

South Africa . 204 parts In-Stock

1+ parts

$2.090

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204

$2.090

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Component Stockers USA

USA . 31,616 parts In-Stock

1+ parts

$2.120

100+ parts

$1.980

1k+ parts

$1.800

10k+ parts

$1.800

31,616

$2.120

$1.980

$1.800

$1.800

AZTECH Wire

Italy . 915 parts In-Stock

1+ parts

$18.660

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915

$18.660

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Continental Prestige Electronics

USA . 41,688 parts In-Stock

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$2.350

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41,688

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$2.350

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QUARKTWIN TECHNOLOGY LTD

USA . 21,096 parts In-Stock

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21,096

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TANS Electronics

Latvia . 5,052 parts In-Stock

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5,052

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Problanco Electronics

Mexico . 4,575 parts In-Stock

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4,575

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Kulean Microsystems

USA . 4,148 parts In-Stock

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4,148

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SupplyDigital Components

Austria . 1,286 parts In-Stock

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1,286

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UHIMA Technologies

Türkiye . 288 parts In-Stock

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288

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Microchip USA

USA . 139 parts In-Stock

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139

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Overview

Upgrade your electronic devices with the NIS6111QPT1 by Onsemi, a high-quality rectifier diode designed for efficiency and reliability. Manufactured by Onsemi, a trusted industry leader, this diode offers superior performance and ensures maximum output current of 30A with a forward voltage of 1.2V. Its innovative design and complex configuration make it ideal for a wide range of applications, delivering unparalleled value to customers. Trust Onsemi for cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and convenient installation onto circuit boards, saving time and effort during assembly.

Maximum Reverse Recovery Time: 0.0365 us

Quick reverse recovery time ensures efficient operation and helps in reducing power losses.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various applications where heat dissipation is a concern.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides a reliable and secure connection, ensuring stable performance and preventing component failure.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for high current and voltage applications, making this product suitable for power rectification.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop results in minimal power dissipation and increased efficiency of the diode.

Maximum Output Current: 30 A

Capable of handling high current loads, making it ideal for power supply and rectification applications.

Maximum Repetitive Peak Reverse Voltage: 24 V

Can handle high reverse voltages, ensuring reliable operation in various circuit configurations.

Diode Element Material: SILICON

Silicon diodes are known for their high conductivity and low power loss, making them efficient and reliable for various applications.

Technical Specifications

Diodes & Rectifiers NIS6111QPT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

COMPLEX

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

S-PQCC-N11

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

90 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

11

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Maximum Reverse Recovery Time:

.0365 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NIS6111QPT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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