Loading...

NIS6111QPT1G

Onsemi

NIS6111QPT1G by Onsemi

NIS6111QPT1G by Onsemi is a RECTIFIER DIODE with 30 A output current and 24 V peak reverse voltage. It has a max forward voltage of 1.2 V and operates at up to 125 °C. Ideal for applications requiring high efficiency, this chip carrier diode is surface mountable in complex configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,022 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,022

-

-

-

-

Digiode

USA . 537 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

537

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 930 parts In-Stock

1+ parts

$15.540

100+ parts

-

1k+ parts

-

10k+ parts

-

930

$15.540

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 23,714 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,714

-

-

-

-

Kulean Microsystems

USA . 8,293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,293

-

-

-

-

SupplyDigital Components

Austria . 6,411 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,411

-

-

-

-

TANS Electronics

Latvia . 4,901 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,901

-

-

-

-

Problanco Electronics

Mexico . 2,839 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,839

-

-

-

-

Microchip USA

USA . 460 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

460

-

-

-

-

Vigor

Singapore . 195 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

195

-

-

-

-

Corohmni

South Africa . 161 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

161

-

-

-

-

Corphita

USA . 56 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56

-

-

-

-

UHIMA Technologies

Türkiye . 39 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

39

-

-

-

-

Overview

Enhance the efficiency of your electronic applications with the NIS6111QPT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality diodes and rectifiers like this one, designed for complex configurations and high performance. Ideal for a wide range of applications requiring precision and reliability, this rectifier diode offers a maximum output current of 30 A and a maximum forward voltage of 1.2 V. Trust Onsemi to provide you with cutting-edge technology that ensures optimal functionality and value for your projects. Upgrade your efficiency today with the NIS6111QPT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Using plastic/epoxy as the package body material makes the product lightweight and durable, ideal for various applications.

Config: COMPLEX

A complex configuration indicates that this diode & rectifier product offers advanced functionality and features for efficient performance.

Surface Mount: YES

Being surface mountable makes installation of this diode & rectifier product easier and more convenient, saving time and effort.

Package Shape: SQUARE

The square package shape allows for efficient use of space on a circuit board, making it suitable for compact designs.

No. of Terminals: 11

Having 11 terminals provides versatility and multiple connection options, allowing for flexibility in circuit configurations.

Package Style (Meter): CHIP CARRIER

The chip carrier package style is known for its high reliability and thermal performance, ensuring stable operation in various environments.

Application: EFFICIENCY

Designed for efficiency, this diode & rectifier product helps optimize energy usage and overall performance in electronic systems.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this product can withstand high heat levels, ensuring reliable performance under challenging conditions.

Terminal Finish: TIN

The terminal finish of tin provides good conductivity and corrosion resistance, enhancing the longevity and performance of the product.

Terminal Position: QUAD

The quad terminal position allows for easy and secure connections, minimizing the risk of signal interference or connectivity issues.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds ensures quick and efficient soldering during assembly, reducing production time.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this product can withstand high temperature soldering processes without compromising its functionality.

Diode Type: RECTIFIER DIODE

A rectifier diode type allows this product to efficiently convert AC to DC current, making it ideal for power supply and rectification applications.

Maximum Forward Voltage (VF): 1.2 V

The low maximum forward voltage of 1.2V indicates minimal power loss during operation, resulting in higher efficiency and energy savings.

Maximum Output Current: 30 A

With a maximum output current of 30A, this diode & rectifier product can handle high power loads, making it suitable for various high-current applications.

Terminal Form: NO LEAD

The no lead terminal form simplifies the assembly process and reduces the risk of solder joint failures, improving the overall reliability of the product.

Maximum Repetitive Peak Reverse Voltage: 24 V

A maximum repetitive peak reverse voltage of 24V indicates the ability of this product to handle reverse voltage without breakdown, ensuring long-term reliability.

Maximum Non Repetitive Peak Forward Current: 90 A

The high maximum non-repetitive peak forward current of 90A allows this product to handle short-term overloads or surges, providing added protection to the system.

Diode Element Material: SILICON

Made of silicon, a commonly used semiconductor material, this diode & rectifier product offers good electrical properties and temperature stability for reliable performance.

Technical Specifications

Diodes & Rectifiers NIS6111QPT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

COMPLEX

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

S-PQCC-N11

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

90 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

11

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NIS6111QPT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1