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UNSPECIFIED Diodes & Rectifiers 243

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
GD2X75MPS17N by Genesic Semiconductor

GD2X75MPS17N

Genesic Semiconductor

GD2X75MPS17N by Genesic Semiconductor is a Schottky rectifier diode with 1700V reverse test voltage and 115A output current. It has a max power dissipation of 1112W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures superior performance in a wide temperature range from -55 to 175°C.

PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

750 A

2

1

4

175 Cel

-55 Cel

115 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

1112 W

1700 V

10 uA

1700 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

GD2X30MPS12N by Genesic Semiconductor

GD2X30MPS12N

Genesic Semiconductor

GD2X30MPS12N by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage and 49A output current. It has a max power dissipation of 382W, making it suitable for high-efficiency applications. With silicon carbide diode element material, it operates b/w -55°C to 175°C efficiently.

FREE WHEELING DIODE, PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

300 A

2

1

4

175 Cel

-55 Cel

49 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

382 W

1200 V

10 uA

1200 V

NO

SCHOTTKY

UNSPECIFIED

UPPER

GD2X100MPS12N by Genesic Semiconductor

GD2X100MPS12N

Genesic Semiconductor

GD2X100MPS12N by Genesic Semiconductor is a Schottky rectifier diode with 1200V reverse test voltage and 136A output current. It has a max power dissipation of 940W, making it suitable for high-efficiency applications. The diode's silicon carbide element material ensures reliable performance in temperatures ranging from -55 to 175°C.

PD-CASE

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

1000 A

2

1

4

175 Cel

-55 Cel

136 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

940 W

1200 V

25 uA

1200 V

NO

SCHOTTKY

UNSPECIFIED

UPPER