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Taiwan Semiconductor Bridge Rectifier Diodes 7

Bridge Rectifier Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
TS6P07G by Taiwan Semiconductor

TS6P07G

Taiwan Semiconductor

TS6P07G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, max output current of 6A, and max repetitive peak reverse voltage of 1000V. It is used in applications requiring high voltage rectification such as power supplies and battery chargers.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PSFM-T4

e3

1

150 A

4

1

4

150 Cel

-55 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

1000 V

10 uA

Bridge Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

GBU601D2G by Taiwan Semiconductor

GBU601D2G

Taiwan Semiconductor

GBU601D2G by Taiwan Semiconductor is a Bridge Rectifier Diode with 4 elements, capable of handling up to 6A output current. It operates b/w -55°C to 150°C and has a max breakdown voltage of 50V. Ideal for applications requiring rectification in electronic circuits.

50 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

175 A

4

1

4

150 Cel

-55 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

AEC-Q101; UL RECOGNIZED

50 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

KBU807GT0G by Taiwan Semiconductor

KBU807GT0G

Taiwan Semiconductor

KBU807GT0G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, capable of handling up to 8A output current and 1000V reverse voltage. It features a plastic/epoxy package body material and matte tin terminal finish, suitable for applications requiring high voltage rectification in temperature range from -55°C to 150°C.

1000 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PSFM-W4

e3

200 A

4

1

4

150 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1000 V

5 uA

1000 V

NO

MATTE TIN

WIRE

SINGLE

TS15P05GC2G by Taiwan Semiconductor

TS15P05GC2G

Taiwan Semiconductor

TS15P05GC2G by Taiwan Semiconductor is a 4-element bridge rectifier diode with max output current of 15A and max repetitive peak reverse voltage of 600V. It operates b/w -55°C to 150°C, making it suitable for applications requiring high voltage rectification in various electronic circuits. The package style is flange mount with matte tin terminal finish, conforming to UL standards.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

240 A

4

1

4

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

250

UL RECOGNIZED

600 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

KBU406GT0G by Taiwan Semiconductor

KBU406GT0G

Taiwan Semiconductor

KBU406GT0G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, capable of handling up to 4A output current and 800V breakdown voltage. It features a plastic/epoxy package body material, matte tin terminal finish, and operates b/w -55°C to 150°C. Ideal for applications requiring reliable rectification in electronic circuits.

800 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-W4

e3

150 A

4

1

4

150 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

800 V

NO

MATTE TIN

WIRE

SINGLE

KBP204GC2 by Taiwan Semiconductor

KBP204GC2

Taiwan Semiconductor

KBP204GC2 by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, max output current of 2A, and max repetitive peak reverse voltage of 400V. It is used in applications requiring reliable rectification such as power supplies and battery chargers due to its UL recognized reference standard and operating temperature range from -55°C to 150°C.

400 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

60 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

400 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

KBP207GC2 by Taiwan Semiconductor

KBP207GC2

Taiwan Semiconductor

KBP207GC2 by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, capable of handling up to 2A output current and 1000V peak reverse voltage. It is designed for applications requiring high reliability in a wide temperature range (-55°C to 150°C), such as power supplies, industrial controls, and automation systems.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

60 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1000 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE