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ZXMP6A17E6TC

Zetex Plc

ZXMP6A17E6TC by Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) ZXMP6A17E6TC attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Zetex Plc

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.125 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

13.6 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMP6A17E6TC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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