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C3M0045065D

Wolfspeed

C3M0045065D by Wolfspeed

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -40 Cel;

Median Price

$11.734

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Mouser Electronics

USA . 979 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

$5.260

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979

$10.000

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$5.260

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DigiKey

USA . 459 parts In-Stock

1+ parts

$19.680

100+ parts

$15.934

1k+ parts

$13.591

10k+ parts

$13.591

459

$19.680

$15.934

$13.591

$13.591

Arrow

USA . 420 parts In-Stock

1+ parts

-

100+ parts

$13.469

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10k+ parts

$13.067

420

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$13.469

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$13.067

Chip1Stop

Japan . 301 parts In-Stock

1+ parts

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100+ parts

$8.210

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301

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$8.210

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Verical

USA . 150 parts In-Stock

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$20.045

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$20.045

150

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$20.045

$20.045

Richardson RFPD

USA . 2 parts In-Stock

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$4.580

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2

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$4.580

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Chip Stock

USA . 672 parts In-Stock

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Florida Circuit

USA . 20 parts In-Stock

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20

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Component Stockers USA

USA . 1,020 parts In-Stock

1+ parts

$10.800

100+ parts

$9.600

1k+ parts

-

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1,020

$10.800

$9.600

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Microchip USA

USA . 4,553 parts In-Stock

1+ parts

$49.620

100+ parts

$48.910

1k+ parts

$48.550

10k+ parts

$48.200

4,553

$49.620

$48.910

$48.550

$48.200

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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8,000

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Technical Specifications

Power Field Effect Transistors (FET) C3M0045065D attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

49 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

132 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

C3M0045065D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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