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SMDJ36AJ

Ween Semiconductors

SMDJ36AJ by Ween Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Transient Suppression Devices SMDJ36AJ attributes and parameters. Explore more Transient Suppression Devices devices from Ween Semiconductors

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

43.9 V

Minimum Breakdown Voltage:

40.3 V

Nominal Breakdown Voltage:

42.1 V

Maximum Clamping Voltage:

58.1 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JESD-30 Code:

R-PDSO-C2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Reference Standard:

IEC-60134; IEC-61643-321; IEC-61000-4-2, 4-4

Maximum Repetitive Peak Reverse Voltage:

36 V

Maximum Reverse Current:

2 uA

Reverse Test Voltage:

36 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SMDJ36AJ Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Ween Semiconductors

WeEn Semiconductors Co., Ltd was registered as a company on Aug 5, 2015. WeEn’s global footprint has an operational headquarters in Shanghai and wholly owned subsidiaries and centers in Jilin & Hongkong, north east China (Front-End Fabrication) Shanghai and Manchester, UK (Research & Development) , Dongguan(Warehouse and Distribution), and cities throughout the world (Sales Offices and Customer Service Access). In September 2018, WeEn added its new, in-house, reliability and failure analysis laboratory in Nanchang, Jiangxi Province, China. With a heritage of over 50 years in semiconductor development and manufacturing, WeEn as a key player has focused on developing a wide and deep portfolio of industry-leading power products including Silicon Carbide Power Devices, Silicon Controlled Rectifiers and Triacs, standard and fast recovery Power Diodes , TVS and ESD protection Devices and IGBTs and modules. All these products are widely used in the markets for telecommunications, computers, consumer electronics, intelligent home appliances, lighting, automotive and power management applications. WeEn seeks to help our customers achieve improved cost and production efficiency and contribute to the development of global intelligent manufacturing.

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