Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;
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Semi Source
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Power Field Effect Transistors (FET) IRFD9014PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Siliconix
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JESD-609 Code:
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IRFD9014PBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Mult Dev 01/Feb/2023
Vishay, through its Siliconix subsidiary, leads the industry in the development of power semiconductor products that improve the efficiency of power management circuitry in end products while reducing space requirements. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Higher-voltage Vishay Siliconix power MOSFETs are used for applications from electric motor control in industrial systems to converting power in the switches and routers that enable the world's communications networks. Vishay Siliconix power ICs address markets ranging from mobile communications and computing to the fixed telecom infrastructure and include switchmode regulators, linear regulators, and power management devices. A number of devices, built on specialized process flows, are purpose-made for the medical, automotive, and military markets. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). This tradition of innovation continues with new silicon technologies designed to maximize power MOSFET performance. In dc-to-dc conversion and load switching, Vishay Siliconix leads the market with high-density TrenchFET silicon processes and innovative package options for better thermal performance (PowerPAK®, PolarPAK®), smaller footprints (ChipFET®, MICRO FOOT®, PowerPAK SC-70, PowerPAK SC-75), and integration of multiple devices (PowerPAIR®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. Recent innovations include the industry’s most powerful DrMOS solution for managing the core voltage in PCs, servers, and other CPU-based systems, and the new microBUCK™ dc-to-dc converter family, which combines the controller IC, MOSFETs, and bootstrap switch for a buck regulator in a tiny 4-mm2 package. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier. Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005.
2N2222A
Digitron Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM358N
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BAV99
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
CL31B104KBCNNNC
Samsung Electro-mechanics
Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
Electronic Devices
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
1N4148
Philips Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
FDD5614P
Onsemi
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
BSS138
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
LM555CN
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
SMBJ18CA
Telefunken Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358DR2G
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
BSS138DW-7-F
Diodes Incorporated
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
Promax-johnton
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;
SI7116DN-T1-E3
Vishay Intertechnology
SI7116DN-T1-E3 by Vishay Intertechnology is an N-CHANNEL FET with 40V DS Breakdown Voltage, 60A IDM, and 0.0078 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.8W.
FDB2532
FDB2532 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 79A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 400mJ and can handle up to 310W power dissipation.
FDD6685
FDD6685 by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 11A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 52W and peak reflow temperature of 260°C, it offers reliable performance in various electronic devices.
G3R160MT12J
Genesic Semiconductor
Power Field-Effect Transistors;
FDMS86101
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Minimum DS Breakdown Voltage: 100 V; Terminal Position: DUAL;
FDS3890
FDS3890 by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS, built-in DIODE, and 0.044 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, has a max power dissipation of 2W, and can withstand temperatures up to 175°C.
IRLML0040TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;
BSZ086P03NS3EGATMA1
Infineon Technologies
Infineon BSZ086P03NS3EGATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 160A IDM, and 0.0134 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features METAL-OXIDE SEMICONDUCTOR tech and operates up to 150°C.
FQD11P06TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
FDS6680A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
IRF530PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 100 V; JEDEC-95 Code: TO-220AB;
IRF640
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
JANTX2N6796
Omnirel
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; JESD-30 Code: O-MBCY-W3; Terminal Finish: Tin/Lead (Sn/Pb);
SIR422DP-T1-GE3
Vishay Intertechnology's SIR422DP-T1-GE3 is an N-channel power FET with a built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 40V, max pulsed drain current of 70A, and max operating temperature of 150°C. This MOSFET has a package style of small outline and offers low drain-source on resistance at 0.0066 ohm.
FDD4685-F085
FDD4685-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.027 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures up to 175°C.
IRFZ44NS
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (ID): 49 A; Terminal Position: SINGLE;
ZVN2110GTA
ZVN2110GTA by Diodes Inc. is a N-CHANNEL power FET with 100V DS breakdown voltage, 6A IDM, and 4 ohm RDS(on). It is used for switching applications in small outline packages.
IRF9530NPBF
IRF9530NPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 56A and EAS of 250mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and -55 to 175 °C temperature range, it offers high power dissipation at 79W.
IRLML2244TRPBF
IRLML2244TRPBF by Infineon Technologies is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 18A Max IDM, and 0.054 ohm Max RDS(on). With a small outline package style and matte tin terminal finish, it operates b/w -55 to 150 °C, making it ideal for various power management needs.
IRF7416TRPBF-1
Infineon's IRF7416TRPBF-1 is a P-CHANNEL FET with 10A max drain current and 2.5W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems operating up to 150°C.
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IRFD110PBF
Power Field-Effect Transistors; Qualification: Not Qualified; Terminal Finish: PURE MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 1 A; Peak Reflow Temperature (C): 260;
IRFD9120PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDIP-T4;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;
IRFD9014PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 260;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 1.1 A; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
IRFD120PBF
Vishay Intertechnology's IRFD120PBF is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 10A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1.3W at 175°C.
IRFD014PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .2 ohm; Terminal Finish: MATTE TIN; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDIP-T3;
Vishay Intertechnology's IRFD014PBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 14A Max IDM, 130mJ EAS, and 0.2ohm RDS(ON). With SILICON element material and Matte Tin finish, it operates at up to 175°C and has a max power dissipation of 1.3W in an IN-LINE package style.
IRFD9024PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 60 V; JESD-609 Code: e3;
Vishay Intertechnology's IRFD9024PBF is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is designed for switching applications, offering a max pulsed drain current of 13A and an avalanche energy rating of 140mJ.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 13 A;
IRFD014
Vishay Intertechnology's IRFD014 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 14A IDM and 130mJ EAS, it operates in ENHANCEMENT MODE with 0.2 ohm RDS(on). The PLASTIC/EPOXY package has IN-LINE style and can handle up to 1.3W power dissipation at 175°C.
Thomson Consumer Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (Abs) (ID): 1.7 A; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Minimum DS Breakdown Voltage: 60 V; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (Abs) (ID): 1.7 A; Qualification: Not Qualified;
IRFD420PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PDIP-T3; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
Vishay Intertechnology's IRFD420PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 3A IDM, 51mJ EAS, and 1W Max Power Dissipation. Operating in ENHANCEMENT MODE at up to 150°C, it has a Drain-Source On Resistance of 3Ω and Matte Tin Terminal Finish.
IRFD9014
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Package Style (Meter): IN-LINE; Terminal Finish: TIN LEAD;
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