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VS-MURB2020CT-1HM3

Vishay Intertechnology

VS-MURB2020CT-1HM3 by Vishay Intertechnology

VS-MURB2020CT-1HM3 by Vishay Intertechnology is a common cathode diode with 0.021 us reverse recovery time and 15 uA reverse current. Ideal for ultra-fast recovery applications, it has a max operating temperature of 175 °C and can handle up to 10 A output current.

Median Price

$1.010

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 91 parts In-Stock

1+ parts

$1.010

100+ parts

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91

$1.010

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Vyrian

USA . 16,742 parts In-Stock

1+ parts

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100+ parts

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16,742

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 272 parts In-Stock

1+ parts

$0.010

100+ parts

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272

$0.010

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.990

100+ parts

-

1k+ parts

$0.950

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50

$0.990

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$0.950

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Continental Prestige Electronics

USA . 4,524 parts In-Stock

1+ parts

$1.010

100+ parts

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$0.990

4,524

$1.010

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$0.990

Argo Parts USA

USA . 3 parts In-Stock

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$1.010

100+ parts

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3

$1.010

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AZTECH Wire

Italy . 217 parts In-Stock

1+ parts

$13.360

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217

$13.360

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Overview

Discover the high-quality VS-MURB2020CT-1HM3 diode by Vishay Intertechnology, designed for ultra-fast recovery applications. With a common cathode configuration and two elements, this diode offers a maximum output current of 10A and a maximum repetitive peak reverse voltage of 200V. Ideal for various electronic devices, this diode provides reliable performance in extreme temperatures ranging from -65°C to 175°C. Trust Vishay Intertechnology for top-notch diodes that deliver exceptional value and efficiency to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode elements, ensuring a longer lifespan for the product.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy circuit integration, and the presence of 2 elements provides redundancy and reliability.

Maximum Reverse Recovery Time: 0.021 us

Ultra fast reverse recovery time ensures efficient operation and minimal power loss in high-speed applications.

Maximum Reverse Current: 15 uA

Low reverse current leads to improved efficiency and reduced power consumption.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards.

No. of Terminals: 3

Three terminals provide flexibility in circuit design and connection options.

Package Style (Meter): IN-LINE

In-line package style is commonly used and easy to work with in various applications.

Application: ULTRA FAST RECOVERY

Specifically designed for ultra fast recovery applications where speed and efficiency are crucial.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the diode to withstand harsh environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures reliable performance in cold environments.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation.

Case Connection: CATHODE

Cathode case connection provides a common reference point for the diode elements.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC power.

Maximum Forward Voltage (VF): 1.15 V

Low forward voltage drop minimizes power loss and enhances energy efficiency.

Maximum Output Current: 10 A

High output current rating makes this diode suitable for various high-power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure connections and easy soldering onto circuit boards.

No. of Elements: 2

Presence of 2 elements adds redundancy and reliability to the diode configuration.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating ensures the diode can handle voltage spikes and transient conditions.

Maximum Non Repetitive Peak Forward Current: 100 A

High non-repetitive peak forward current rating allows the diode to handle surges and overloads.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in various circuit applications.

Technical Specifications

Diodes & Rectifiers VS-MURB2020CT-1HM3 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

15 uA

Maximum Reverse Recovery Time:

.021 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

VS-MURB2020CT-1HM3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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