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VS-MURB2020CT-1-M3

Vishay Intertechnology

VS-MURB2020CT-1-M3 by Vishay Intertechnology

VS-MURB2020CT-1-M3 by Vishay Intertechnology is a diode with common cathode, 2 elements. It has a max reverse recovery time of 0.035 us and max reverse current of 15 uA. Ideal for ultra-fast recovery applications with a max operating temperature of 175°C.

Median Price

$2.850

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,127 parts In-Stock

1+ parts

$2.850

100+ parts

$1.261

1k+ parts

$0.935

10k+ parts

$0.769

5,127

$2.850

$1.261

$0.935

$0.769

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 34 parts In-Stock

1+ parts

$0.578

100+ parts

-

1k+ parts

-

10k+ parts

-

34

$0.578

-

-

-

Vyrian

USA . 8,110 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,110

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,942 parts In-Stock

1+ parts

$0.578

100+ parts

-

1k+ parts

-

10k+ parts

$0.567

3,942

$0.578

-

-

$0.567

Argo Parts USA

USA . 1,348 parts In-Stock

1+ parts

$0.578

100+ parts

-

1k+ parts

-

10k+ parts

$0.561

1,348

$0.578

-

-

$0.561

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.578

100+ parts

-

1k+ parts

$0.549

10k+ parts

$0.538

1,000

$0.578

-

$0.549

$0.538

Ampacity Inc.

Singapore . 8,042 parts In-Stock

1+ parts

$1.490

100+ parts

-

1k+ parts

-

10k+ parts

-

8,042

$1.490

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Microchip USA

USA . 5,725 parts In-Stock

1+ parts

$7.995

100+ parts

-

1k+ parts

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10k+ parts

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5,725

$7.995

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,000

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Overview

Unleash the power of ultra-fast recovery with the Vishay Intertechnology VS-MURB2020CT-1-M3 diode. Made with precision by Vishay, a trusted manufacturer in the industry, this diode offers unrivaled performance and reliability. Ideal for a wide range of applications, this diode boasts a common cathode configuration with 2 elements, making it versatile and efficient. With a maximum reverse recovery time of 0.035 us and a maximum output current of 10 A, this diode ensures smooth operation even in the most demanding conditions. Upgrade your projects with the Vishay Intertechnology VS-MURB2020CT-1-M3 diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection to the diode elements and ensures durability and long-term stability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy circuit integration, and having 2 elements provides redundancy and increased reliability.

Maximum Reverse Recovery Time: 0.035 us

The ultra-fast reverse recovery time ensures quick switching and efficient operation.

Maximum Reverse Current: 15 uA

Low reverse current minimizes power loss and improves overall efficiency.

Maximum Output Current: 10 A

High output current capacity makes this diode suitable for applications requiring higher power handling.

Maximum Forward Voltage (VF): 1.15 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for use in various environments and conditions.

Minimum Breakdown Voltage: 200 V

High breakdown voltage ensures protection against voltage spikes and surges.

Technical Specifications

Diodes & Rectifiers VS-MURB2020CT-1-M3 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE

Application:

ULTRA FAST RECOVERY

Minimum Breakdown Voltage:

200 V

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

15 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

200 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

VS-MURB2020CT-1-M3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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