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VS-8ETH06-1-M3

Vishay Intertechnology

VS-8ETH06-1-M3 by Vishay Intertechnology

VS-8ETH06-1-M3 by Vishay Intertechnology is a single rectifier diode with a max forward voltage of 2.4V and a max output current of 8A. It is designed for hyperfast soft recovery applications, with a max operating temperature of 175°C and a package style of in-line.

Median Price

$0.750

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.750

100+ parts

-

1k+ parts

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10k+ parts

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50

$0.750

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-

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Vyrian

USA . 6,305 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,305

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.750

100+ parts

-

1k+ parts

-

10k+ parts

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100

$0.750

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Ampacity Inc.

Singapore . 1,342 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

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10k+ parts

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1,342

$1.010

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Microchip USA

USA . 6,733 parts In-Stock

1+ parts

$3.420

100+ parts

-

1k+ parts

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6,733

$3.420

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AZTECH Wire

Italy . 670 parts In-Stock

1+ parts

$7.076

100+ parts

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1k+ parts

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10k+ parts

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670

$7.076

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Overview

Experience superior performance with the VS-8ETH06-1-M3 by Vishay Intertechnology. As a leading manufacturer in the industry, Vishay Intertechnology is known for its exceptional quality and reliability. The VS-8ETH06-1-M3 belongs to the category of Diodes & Rectifiers and offers a wide range of applications. With its hyperfast soft recovery and maximum output current of 8A, this rectifier diode delivers unparalleled efficiency and durability. Whether you're working on power electronics or industrial automation, the VS-8ETH06-1-M3 provides excellent value, benefits, and advantages that surpass customer expectations. Trust in Vishay Intertechnology's expertise and choose the VS-8ETH06-1-M3 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material provides good protection and insulation for the diode, making it durable and reliable for long-term use.

Maximum Reverse Recovery Time: 0.025 us

The low reverse recovery time of 0.025 us ensures fast switching speeds and efficient performance in applications requiring quick response times.

Maximum Reverse Current: 50 uA

The low maximum reverse current of 50 uA indicates minimal leakage current, leading to improved efficiency and reduced power loss.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this diode can withstand elevated temperatures without compromising its performance or reliability.

Maximum Forward Voltage (VF): 2.4 V

The low maximum forward voltage of 2.4 V ensures minimal voltage drop across the diode, resulting in efficient power conversion and reduced energy loss.

Maximum Output Current: 8 A

The high maximum output current of 8 A allows this diode to handle large electrical loads, making it suitable for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high maximum repetitive peak reverse voltage of 600 V makes this diode suitable for applications requiring high voltage handling capabilities.

Technical Specifications

Diodes & Rectifiers VS-8ETH06-1-M3 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE

Application:

HYPERFAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.4 V

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

Maximum Non Repetitive Peak Forward Current:

90 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.025 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

VS-8ETH06-1-M3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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