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VS-8EWS08STRR-M3

Vishay Intertechnology

VS-8EWS08STRR-M3 by Vishay Intertechnology

VS-8EWS08STRR-M3 by Vishay Intertechnology is a single rectifier diode with 800V reverse voltage and 8A output current. Ideal for high voltage, high power applications with operating temperatures ranging from -55°C to 150°C. Features matte tin over nickel terminal finish in a small outline package style.

Median Price

$0.745

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 3,000 parts In-Stock

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Vyrian

USA . 2,336 parts In-Stock

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Nova Conductors

Japan . 36 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$0.018

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$0.017

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$0.017

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$0.018

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Corohmni

South Africa . 169 parts In-Stock

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$0.043

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Aztec Data Supply Inc.

USA . 179 parts In-Stock

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$0.185

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Semicontronic

India . 1,050 parts In-Stock

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$2.010

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$1.960

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$1.950

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1,050

$2.010

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$1.950

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Ampacity Inc.

Singapore . 920 parts In-Stock

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$2.010

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$2.010

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Microchip USA

USA . 5,019 parts In-Stock

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$10.306

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AZTECH Wire

Italy . 892 parts In-Stock

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$10.443

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Component Stockers USA

USA . 7,534 parts In-Stock

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$16.100

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Argo Parts USA

USA . 4,587 parts In-Stock

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Continental Prestige Electronics

USA . 3,844 parts In-Stock

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Bastille Electronics

Australia . 51 parts In-Stock

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Overview

Upgrade your power systems with the VS-8EWS08STRR-M3 from Vishay Intertechnology. This high-quality rectifier diode offers reliable performance in high voltage, high power applications. With a maximum output current of 8A and a maximum repetitive peak reverse voltage of 800V, this diode ensures optimal efficiency and durability. Trust Vishay Intertechnology's expertise in diodes and rectifiers to deliver top-notch products that meet your power needs. Experience the difference with the VS-8EWS08STRR-M3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for high voltage and high power applications.

Config: SINGLE

Simplified design with a single diode configuration for straightforward circuit integration.

Surface Mount: YES

Enables easy and efficient PCB assembly for compact electronic devices.

Package Shape: RECTANGULAR

Facilitates space-efficient placement on the circuit board, optimizing layout and design.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance in various operating conditions.

Minimum Operating Temperature: -55 °C

Operates effectively even in low temperature environments, enhancing versatility.

Terminal Finish: MATTE TIN OVER NICKEL

Provides excellent conductivity and corrosion resistance for long-term performance.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC power.

Maximum Forward Voltage (VF): 1.1 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 8 A

Capable of handling high output currents, suitable for high power applications.

Maximum Repetitive Peak Reverse Voltage: 800 V

Can withstand high reverse voltages, providing reliable protection in circuitry.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and performance characteristics, making them a preferred choice in electronics.

Technical Specifications

Diodes & Rectifiers VS-8EWS08STRR-M3 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Application:

HIGH VOLTAGE HIGH POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

VS-8EWS08STRR-M3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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