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VS-85HFL100S05

Vishay Intertechnology

VS-85HFL100S05 by Vishay Intertechnology

VS-85HFL100S05 by Vishay Intertechnology is a single diode rectifier with a max output current of 85A and a max reverse recovery time of 0.12us. It is designed for fast recovery applications and can operate in temperatures ranging from -40 to 125 °C.

Median Price

$22.310

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 182 parts In-Stock

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$22.310

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$13.220

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$13.200

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182

$22.310

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Galco

USA . 84 parts In-Stock

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$14.480

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84

$14.480

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Nova Conductors

Japan . 75 parts In-Stock

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$15.980

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$15.980

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Vyrian

USA . 7,652 parts In-Stock

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Zilex Electronics Inc.

Canada . 50 parts In-Stock

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50

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AZTECH Wire

Italy . 726 parts In-Stock

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$7.531

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726

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Ampacity Inc.

Singapore . 98 parts In-Stock

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$14.870

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98

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Netroflash

USA . 2,000 parts In-Stock

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$15.980

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Microchip USA

USA . 2,369 parts In-Stock

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$55.552

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2,369

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Authorized Procurement Solutions

USA . 200 parts In-Stock

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Perfect Parts

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Overview

Discover the VS-85HFL100S05 by Vishay Intertechnology, a game-changing diode that brings uncompromising quality and exceptional performance to your projects. With Vishay's renowned manufacturing expertise and commitment to excellence, you can trust that this diode will deliver reliable and consistent results. Whether it's in fast recovery applications or other demanding environments, the VS-85HFL100S05 offers incredible value, benefits, and advantages. Experience its maximum output current of 85A, maximum reverse recovery time of 0.12us, and maximum repetitive peak reverse voltage of 1000V. Get ready to elevate your projects with the superior performance of the VS-85HFL100S05!

Feature Benefit Bullets

Package Body Material: METAL

This product's metal body material provides excellent heat dissipation, ensuring its optimal performance and reliability even in high temperature environments.

Config: SINGLE

The single configuration of this diode ensures simplicity and ease of use in various applications, making it an ideal choice for both professionals and DIY enthusiasts.

Maximum Reverse Recovery Time: 0.12 us

With an incredibly fast reverse recovery time, this diode allows for efficient switching and reduces energy loss, resulting in improved overall system performance.

Maximum Reverse Current: 100 uA

The extremely low reverse current of this diode reduces power consumption and enhances power efficiency, making it suitable for energy-efficient devices.

Package Shape: ROUND

The round shape of this diode's package provides stability during installation and ensures a secure fit, allowing for hassle-free integration into different electronic systems.

No. of Terminals: 1

Having only one terminal simplifies the wiring process, minimizing the risk of incorrect connections and reducing installation time.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style enables easy and secure mounting of the diode onto various surfaces, ensuring stability and reliability in demanding applications.

Application: FAST RECOVERY

This diode's fast recovery characteristics enable it to swiftly transition between conducting and non-conducting states, making it suitable for high-speed rectification and switching applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand demanding conditions, ensuring reliable operation even in environments prone to heat.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature capability allows this diode to perform reliably in extremely cold environments, making it versatile for various climate conditions.

Terminal Position: UPPER

The upper terminal position simplifies the connection process and provides convenience during installation, making it easier to integrate this diode into different circuit designs.

Case Connection: CATHODE

The cathode case connection simplifies circuit design and allows for efficient heat dissipation, enhancing the overall performance and lifespan of the diode.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC), making it indispensable in many power supply applications.

Maximum Forward Voltage (VF): 1.75 V

With a low maximum forward voltage, this diode exhibits minimal voltage drop during operation, minimizing power loss and improving overall system efficiency.

Maximum Output Current: 85 A

The high maximum output current allows this diode to handle substantial electrical loads, making it suitable for power electronics and high-current applications.

Terminal Form: SOLDER LUG

The solder lug terminal form simplifies the soldering process, ensuring a secure and permanent connection, making it a reliable choice for rugged environments.

No. of Elements: 1

Having a single diode element simplifies the circuit design and reduces complexity, enhancing the overall reliability of the system.

Maximum Repetitive Peak Reverse Voltage: 1000 V

With a high maximum repetitive peak reverse voltage, this diode can handle high-voltage applications safely and reliably.

No. of Phases: 1

The single phase design of this diode simplifies circuit configurations, making it suitable for single-phase applications such as rectification and voltage regulation.

Maximum Non Repetitive Peak Forward Current: 1369 A

The high maximum non-repetitive peak forward current capability makes this diode suitable for handling short-term high current pulses, ensuring reliable operation in demanding applications.

Diode Element Material: SILICON

The use of silicon as the diode element material offers excellent stability, low leakage current, and high temperature tolerance, making this diode highly durable and reliable.

Technical Specifications

Diodes & Rectifiers VS-85HFL100S05 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

DO-203AB

JESD-30 Code:

O-MUPM-D1

Maximum Non Repetitive Peak Forward Current:

1369 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

85 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

POST/STUD MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.12 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

VS-85HFL100S05 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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