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VS-15CTQ045STRR-M3

Vishay Intertechnology

VS-15CTQ045STRR-M3 by Vishay Intertechnology

VS-15CTQ045STRR-M3 by Vishay Intertechnology is a Schottky rectifier diode with 45V peak reverse voltage, 7.5A output current, and 0.7V forward voltage. Common cathode configuration in a small outline package makes it ideal for high-speed switching applications requiring low power loss and high efficiency. Operating temperature range from -55 to 150°C suits various industrial electronics designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 9,147 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Semicontronic

India . 1,077 parts In-Stock

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$0.010

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$0.010

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$0.010

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1,077

$0.010

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Corohmni

South Africa . 342 parts In-Stock

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$0.097

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Aztec Data Supply Inc.

USA . 2,532 parts In-Stock

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$0.180

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2,532

$0.180

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Ampacity Inc.

Singapore . 810 parts In-Stock

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$1.010

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Microchip USA

USA . 2,264 parts In-Stock

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$4.385

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$4.385

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AZTECH Wire

Italy . 266 parts In-Stock

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$17.942

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$17.942

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Continental Prestige Electronics

USA . 4,036 parts In-Stock

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Argo Parts USA

USA . 2,711 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Discover the powerful performance of the VS-15CTQ045STRR-M3 by Vishay Intertechnology, a top-quality rectifier diode designed for a wide range of applications. With its innovative Schottky technology and high output current capability of 7.5 A, this diode offers unmatched reliability and efficiency. Whether you're in the automotive, industrial, or consumer electronics industry, this common cathode diode with dual elements provides superior functionality and value. Trust Vishay Intertechnology for cutting-edge solutions that elevate your products to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode elements, ensuring long-term reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy circuit integration and connectivity with other components.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and space.

Maximum Reverse Current: 800 uA

Ensures minimal power loss and high efficiency in reverse bias operation.

Package Shape: RECTANGULAR

Facilitates compact PCB design and layout, optimizing space utilization.

No. of Terminals: 2

Simplifies the wiring and connection process, reducing complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

Ideal for space-constrained applications where size and form factor matter.

Maximum Operating Temperature: 150 °C

Ensures stable performance even in high-temperature environments.

Minimum Operating Temperature: -55 °C

Wide operating temperature range makes it suitable for various industrial applications.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplifies the installation process and reduces the chances of error in connection.

Case Connection: CATHODE

Ensures proper polarity and connectivity in the circuit.

Diode Type: RECTIFIER DIODE

Designed for converting AC to DC with low forward voltage drop and high efficiency.

Maximum Forward Voltage (VF): 0.7 V

Efficient energy conversion with minimal voltage drop across the diode.

Maximum Output Current: 7.5 A

High current handling capacity for demanding applications.

Technology: SCHOTTKY

Fast switching speed and low forward voltage drop for high efficiency and performance.

Terminal Form: GULL WING

Facilitates easy and secure mounting on the PCB for reliable connections.

No. of Elements: 2

Dual diode configuration for enhanced functionality and reliability.

Maximum Repetitive Peak Reverse Voltage: 45 V

Suitable for applications requiring high reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 145 A

High surge current capability for reliable performance under transient conditions.

Diode Element Material: SILICON

Highly reliable and widely used material for diode construction, ensuring durability.

Technical Specifications

Diodes & Rectifiers VS-15CTQ045STRR-M3 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

145 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

7.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

800 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

VS-15CTQ045STRR-M3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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