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VQ1000J

Vishay Intertechnology

VQ1000J by Vishay Intertechnology

N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 14;

Median Price

$34.015

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 72,498 parts In-Stock

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$1.730

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$1.730

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American Microsemiconductor Inc.

USA . 145 parts In-Stock

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$66.300

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145

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Digital Electronic Gebert Verwaltungs UG

Germany . 182 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 63 parts In-Stock

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Sunrise Surplus Inc.

USA . 28 parts In-Stock

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NexGen Digital

USA . 27 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

. 25 parts In-Stock

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Carlin Systems, Inc.

USA . 21 parts In-Stock

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MRC Electronics

USA . 21 parts In-Stock

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Sinequanon

UK . 15 parts In-Stock

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Electronic Expediters

USA . 14 parts In-Stock

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CirComp Electronics, Inc.

USA . 10 parts In-Stock

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Whistler Technology

UK . 10 parts In-Stock

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Q Components

USA . 10 parts In-Stock

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Sogenti Electronics

Canada . 9 parts In-Stock

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LittleDiode

UK . 6 parts In-Stock

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Infinite Electronics LLP (Excess)

. 309 parts In-Stock

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Assy Fe

Spain . 6 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) VQ1000J attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

FAST SWITCHING

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.225 A

Maximum Drain Current (ID):

.025 A

Maximum Drain-Source On Resistance:

5.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e0

No. of Elements:

4

No. of Terminals:

14

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

1 A

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

10 ns

Maximum Turn On Time (ton):

10 ns

Trade Compliance

VQ1000J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-191-9450, 5961011919450

NIIN

011919450

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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