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SQS462EN-T1_GE3

Vishay Intertechnology

SQS462EN-T1_GE3 by Vishay Intertechnology

Vishay Intertechnology's SQS462EN-T1_GE3 is an N-CHANNEL FET with 60V DS Breakdown Voltage, 32A IDM, and 0.063 ohm RDS(on). Ideal for power applications requiring high drain current handling in a compact SQUARE package. Operating at up to 175°C, it suits various industrial and automotive systems.

Median Price

$0.363

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,748 parts In-Stock

1+ parts

$1.560

100+ parts

$0.657

1k+ parts

$0.471

10k+ parts

$0.425

5,748

$1.560

$0.657

$0.471

$0.425

DigiKey

USA . 3,539 parts In-Stock

1+ parts

$1.560

100+ parts

$0.656

1k+ parts

$0.470

10k+ parts

$0.371

3,539

$1.560

$0.656

$0.470

$0.371

Avnet

USA . 15,000 parts In-Stock

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15,000

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Arrow

USA . 3,000 parts In-Stock

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$0.362

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$0.362

Verical

USA . 3,000 parts In-Stock

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$0.334

3,000

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$0.334

Chip1Stop

Japan . 3,000 parts In-Stock

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$0.363

3,000

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$0.363

Distributors (In-Stock)

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Vyrian

USA . 47,666 parts In-Stock

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$0.334

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$0.334

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Chip Stock

USA . 11,500 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Distributors (Availability)

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Semicontronic

India . 4,466 parts In-Stock

1+ parts

$0.284

100+ parts

$0.277

1k+ parts

$0.275

10k+ parts

-

4,466

$0.284

$0.277

$0.275

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Corohmni

South Africa . 662 parts In-Stock

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$0.491

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662

$0.491

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.558

100+ parts

$0.508

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$0.458

10k+ parts

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40

$0.558

$0.508

$0.458

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Component Stockers USA

USA . 31,272 parts In-Stock

1+ parts

$0.980

100+ parts

$0.620

1k+ parts

$0.430

10k+ parts

$0.380

31,272

$0.980

$0.620

$0.430

$0.380

Futuretech Components

Singapore . 12,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,848 parts In-Stock

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2,848

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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2,400

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Argo Parts USA

USA . 520 parts In-Stock

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520

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Kepictronics

USA . 175 parts In-Stock

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175

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Netroflash

USA . 100 parts In-Stock

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100

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Overview

Enhance your power management solutions with the Vishay Intertechnology SQS462EN-T1_GE3 Power Field Effect Transistor. With its N-CHANNEL design, SINGLE configuration, and built-in diode, this FET offers exceptional performance and reliability for a wide range of applications. Experience the benefits of its 60V DS Breakdown Voltage, 32A Maximum Pulsed Drain Current, and high-quality construction. Trust in Vishay Intertechnology's expertise in semiconductor technology to deliver unparalleled value and efficiency. Upgrade your power systems today with the SQS462EN-T1_GE3.

Feature Benefit Bullets

Polarity or Channel Type

N-CHANNEL - Provides efficient performance and reliable operation in various applications.

Minimum DS Breakdown Voltage

60 V - Ensures high voltage tolerance and protection against voltage spikes.

Maximum Pulsed Drain Current (IDM)

32 A - Capable of handling high current loads for demanding tasks.

Avalanche Energy Rating (EAS)

4 mJ - Offers protection against energy spikes and enhances overall durability.

Maximum Drain Current (ID)

8 A - Suitable for applications requiring moderate current handling.

Maximum Drain-Source On Resistance

0.063 ohm - Provides low resistance for efficient power flow and reduced heat dissipation.

Maximum Operating Temperature

175 °C - Can operate in high temperature environments without risk of overheating.

Technical Specifications

Power Field Effect Transistors (FET) SQS462EN-T1_GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

4 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.063 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-XDSO-C5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

32 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Trade Compliance

SQS462EN-T1_GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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