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SQ4431EY-T1_GE3

Vishay Intertechnology

SQ4431EY-T1_GE3 by Vishay Intertechnology

Vishay Intertechnology's SQ4431EY-T1_GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 7.2A ID, and 0.03 ohm RDS(ON). Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation and 175°C max temp.

Median Price

$1.700

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 167,209 parts In-Stock

1+ parts

$1.170

100+ parts

$0.829

1k+ parts

$0.571

10k+ parts

$0.519

167,209

$1.170

$0.829

$0.571

$0.519

Mouser Electronics

USA . 53,625 parts In-Stock

1+ parts

$1.700

100+ parts

$0.723

1k+ parts

$0.521

10k+ parts

$0.480

53,625

$1.700

$0.723

$0.521

$0.480

DigiKey

USA . 2,615 parts In-Stock

1+ parts

$1.700

100+ parts

$0.722

1k+ parts

$0.520

10k+ parts

$0.419

2,615

$1.700

$0.722

$0.520

$0.419

Element14

Singapore . 167,209 parts In-Stock

1+ parts

$2.150

100+ parts

$0.904

1k+ parts

$0.542

10k+ parts

$0.516

167,209

$2.150

$0.904

$0.542

$0.516

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.609

100+ parts

-

1k+ parts

-

10k+ parts

-

550

$0.609

-

-

-

Vyrian

USA . 105,561 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

105,561

-

-

-

-

IBS Electronics

USA . 12,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.045

12,500

-

-

-

$1.045

Chip Stock

USA . 11,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,500

-

-

-

-

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.370

10,000

-

-

-

$1.370

ComSIT USA

USA . 3,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,279

-

-

-

-

ComSIT Distribution GmbH

Germany . 3,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,279

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 90 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 1,865 parts In-Stock

1+ parts

$0.424

100+ parts

-

1k+ parts

-

10k+ parts

-

1,865

$0.424

-

-

-

Argo Parts USA

USA . 1,658 parts In-Stock

1+ parts

$0.536

100+ parts

-

1k+ parts

-

10k+ parts

$0.520

1,658

$0.536

-

-

$0.520

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.609

100+ parts

-

1k+ parts

$0.579

10k+ parts

$0.566

50

$0.609

-

$0.579

$0.566

Advanced Electronics

New Zealand . 1,200 parts In-Stock

1+ parts

$0.706

100+ parts

$0.650

1k+ parts

$0.609

10k+ parts

-

1,200

$0.706

$0.650

$0.609

-

Ampacity Inc.

Singapore . 105,438 parts In-Stock

1+ parts

$0.740

100+ parts

-

1k+ parts

-

10k+ parts

-

105,438

$0.740

-

-

-

Semicontronic

India . 210,931 parts In-Stock

1+ parts

$0.840

100+ parts

$0.819

1k+ parts

$0.815

10k+ parts

-

210,931

$0.840

$0.819

$0.815

-

Continental Prestige Electronics

USA . 124,840 parts In-Stock

1+ parts

$0.952

100+ parts

$0.582

1k+ parts

$0.379

10k+ parts

$0.318

124,840

$0.952

$0.582

$0.379

$0.318

Aztec Data Supply Inc.

USA . 4,276 parts In-Stock

1+ parts

$1.560

100+ parts

-

1k+ parts

-

10k+ parts

-

4,276

$1.560

-

-

-

RC Electronics

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60,000

-

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 90 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90

-

-

-

-

GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Discover the power of the SQ4431EY-T1_GE3 by Vishay Intertechnology, a top-tier manufacturer known for delivering high-quality Small Signal Field Effect Transistors. With its P-CHANNEL configuration and built-in diode, this transistor offers unrivaled performance in a variety of applications. From enhancing signal processing to optimizing circuit efficiency, this product provides value and benefits that surpass expectations. Upgrade your electronics with this cutting-edge technology and experience the advantages firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where a P-channel FET is needed.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with a built-in diode for certain circuit configurations.

Surface Mount: YES

Allows for easy and efficient placement on circuit boards.

Minimum DS Breakdown Voltage: 30 V

Provides a safe operating range for various applications.

Package Shape: RECTANGULAR

Space-saving design for compact circuit layouts.

Terminal Form: GULL WING

Facilitates easy soldering onto circuit boards.

Operating Mode: ENHANCEMENT MODE

Offers flexibility in control and operation of the transistor.

No. of Terminals: 8

Provides multiple connection points for versatile circuit design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable technology for efficient signal processing.

Maximum Operating Temperature: 175 °C

Can withstand high temperature environments.

Transistor Element Material: SILICON

High-quality material for reliable transistor performance.

Maximum Drain Current (ID): 7.2 A

Capable of handling high current loads in circuits.

Maximum Drain-Source On Resistance: 0.03 ohm

Low on-resistance for efficient power handling.

Terminal Position: DUAL

Provides flexibility in circuit connections.

Maximum Time At Peak Reflow Temperature (s): 40

Maintains stability during soldering process.

Peak Reflow Temperature °C: 260

Withstands high temperature soldering processes.

Maximum Feedback Capacitance (Crss): 175 pF

Provides good feedback control in certain applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SQ4431EY-T1_GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

7.2 A

Maximum Drain-Source On Resistance:

.03 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

175 pF

JESD-30 Code:

R-PDSO-G8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Trade Compliance

SQ4431EY-T1_GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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