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SMCJ51A-E3/9AT

Vishay Intertechnology

SMCJ51A-E3/9AT by Vishay Intertechnology

Vishay Intertechnology SMCJ51A-E3/9AT is a unidirectional avalanche diode with 51V max repetitive peak reverse voltage, 1500W max non-repetitive peak reverse power dissipation, and 59.7V breakdown voltage. Ideal for transient suppression in electronics to protect against voltage spikes.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TTI

USA . 35,000 parts In-Stock

1+ parts

-

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$0.107

35,000

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$0.107

Verical

USA . 28,000 parts In-Stock

1+ parts

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$0.193

28,000

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$0.193

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 27 parts In-Stock

1+ parts

$0.233

100+ parts

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27

$0.233

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NAC Semi

USA . 31,500 parts In-Stock

1+ parts

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$0.148

31,500

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$0.148

Vyrian

USA . 5,591 parts In-Stock

1+ parts

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5,591

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Prism Electronics

USA . 3,500 parts In-Stock

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3,500

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 3,500 parts In-Stock

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3,500

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ComSIT Distribution GmbH

Germany . 1,458 parts In-Stock

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1,458

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Distributors (Availability)

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Ampacity Inc.

Singapore . 34,542 parts In-Stock

1+ parts

$0.102

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34,542

$0.102

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.233

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2,000

$0.233

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AZTECH Wire

Italy . 302 parts In-Stock

1+ parts

$19.890

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302

$19.890

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Component Stockers USA

USA . 26,705 parts In-Stock

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$0.130

26,705

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$0.130

Perfect Parts

USA . 6,152 parts In-Stock

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6,152

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Overview

Discover the Vishay Intertechnology SMCJ51A-E3/9AT, a top-of-the-line transient suppression device designed to protect your electronic equipment from voltage spikes. With a maximum non-repetitive peak reverse power dissipation of 1500W and a nominal breakdown voltage of 59.7V, this product ensures reliable performance in various applications. Vishay Intertechnology, known for its quality and innovation, guarantees that you are getting the best protection for your devices. Don't compromise on safety - choose the SMCJ51A-E3/9AT for peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring long-lasting performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Capable of handling high power surges, making it suitable for transient suppression applications.

Nominal Breakdown Voltage: 59.7 V

Provides reliable overvoltage protection by breaking down at a specific voltage, diverting excess energy away from sensitive components.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable operation in various environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, offering effective protection against voltage spikes and surges.

Technical Specifications

Transient Suppression Devices SMCJ51A-E3/9AT attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

62.7 V

Minimum Breakdown Voltage:

56.7 V

Nominal Breakdown Voltage:

59.7 V

Maximum Clamping Voltage:

82.4 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

51 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMCJ51A-E3/9AT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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