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SMCG78AHE3/9AT

Vishay Intertechnology

SMCG78AHE3/9AT by Vishay Intertechnology

Vishay Intertechnology's SMCG78AHE3/9AT is a single avalanche diode with 1500W power dissipation and 91.25V breakdown voltage. Ideal for transient suppression in electronics, it has a unidirectional polarity, 126V clamping voltage, and operates b/w -55°C to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 243 parts In-Stock

1+ parts

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243

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Nova Conductors

Japan . 87 parts In-Stock

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87

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,023 parts In-Stock

1+ parts

$1.010

100+ parts

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1,023

$1.010

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AZTECH Wire

Italy . 292 parts In-Stock

1+ parts

$9.313

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292

$9.313

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Looking for reliable transient suppression devices? Look no further than the Vishay Intertechnology SMCG78AHE3/9AT. With a high-quality plastic/epoxy package and a maximum power dissipation of 1500W, this single-configured diode offers superior protection against voltage spikes. Whether you're in industrial, automotive, or consumer electronics applications, this UL recognized diode provides peace of mind with its unidirectional polarity and avalanche technology. Trust Vishay Intertechnology for top-notch performance and quality you can rely on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the device, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

The high power dissipation allows this device to handle surges effectively, protecting connected equipment.

Nominal Breakdown Voltage: 91.25 V

The nominal breakdown voltage helps in efficiently suppressing transient voltage spikes and protecting the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can function reliably in various environmental conditions.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that this product meets safety standards and regulations, making it a reliable choice.

Technical Specifications

Transient Suppression Devices SMCG78AHE3/9AT attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

95.8 V

Minimum Breakdown Voltage:

86.7 V

Nominal Breakdown Voltage:

91.25 V

Maximum Clamping Voltage:

126 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-215AB

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

78 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMCG78AHE3/9AT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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