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SMBJ22AHE3_A/I

Vishay Intertechnology

SMBJ22AHE3_A/I by Vishay Intertechnology

Vishay Intertechnology's SMBJ22AHE3_A/I is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 600W power dissipation, ideal for transient suppression. With a breakdown voltage of 25.65V and max clamping voltage of 35.5V, it operates b/w -55 to 150 °C, making it suitable for various electronic applications requiring surge protection.

Median Price

$0.235

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 12,800 parts In-Stock

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$0.235

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Distributors (In-Stock)

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Vyrian

USA . 2,515 parts In-Stock

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2,515

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Nova Conductors

Japan . 72 parts In-Stock

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72

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Distributors (Availability)

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Ampacity Inc.

Singapore . 12,379 parts In-Stock

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$0.200

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AZTECH Wire

Italy . 1,155 parts In-Stock

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$14.170

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Looking for top-quality Transient Suppression Devices? Look no further than the SMBJ22AHE3_A/I by Vishay Intertechnology! This single-config, surface-mount diode offers a maximum non-repetitive peak reverse power dissipation of 600 W and a nominal breakdown voltage of 25.65 V, making it perfect for a wide range of applications. With a small outline package style and superior technology, this diode provides reliable protection against voltage spikes. Trust Vishay Intertechnology for high-performance components that deliver peace of mind and value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high maximum non-repetitive peak reverse power dissipation of 600 W ensures that the device can handle sudden spikes in voltage or power, providing reliable protection for sensitive components.

Nominal Breakdown Voltage: 25.65 V

The nominal breakdown voltage of 25.65 V ensures that the device can effectively suppress transient voltage spikes above this level, protecting connected equipment from damage.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the device to function effectively in a wide range of environmental conditions, making it versatile and reliable.

Technology: AVALANCHE

The avalanche technology used in the device allows for quick and efficient response to transient voltage spikes, providing robust protection for connected equipment.

Technical Specifications

Transient Suppression Devices SMBJ22AHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

26.9 V

Minimum Breakdown Voltage:

24.4 V

Nominal Breakdown Voltage:

25.65 V

Maximum Clamping Voltage:

35.5 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

22 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

22 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ22AHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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