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SMA6J18A-M3/5A

Vishay Intertechnology

SMA6J18A-M3/5A by Vishay Intertechnology

Vishay Intertechnology's SMA6J18A-M3/5A is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 21.05V Breakdown Voltage and 33.2V Max Clamping Voltage. Ideal for transient suppression in electronics, it operates b/w -55°C to 150°C, featuring a UNIDIRECTIONAL polarity and AVALANCHE technology.

Median Price

$0.118

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 79 parts In-Stock

1+ parts

$0.118

100+ parts

-

1k+ parts

-

10k+ parts

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79

$0.118

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Vyrian

USA . 7,711 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,711

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 639 parts In-Stock

1+ parts

$14.290

100+ parts

-

1k+ parts

-

10k+ parts

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639

$14.290

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.116

1k+ parts

$0.112

10k+ parts

$0.110

500

-

$0.116

$0.112

$0.110

Overview

Looking for reliable transient suppression devices? Look no further than Vishay Intertechnology's SMA6J18A-M3/5A. With a maximum non-repetitive peak reverse power dissipation of 600W and a nominal breakdown voltage of 21.05V, this product offers superior quality and performance. Ideal for applications requiring protection against voltage spikes, this diode features a unidirectional polarity and a maximum clamping voltage of 33.2V. Trust Vishay Intertechnology for high-quality components that deliver peace of mind and protection for your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides good insulation and protection for the internal components of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability allows the device to handle sudden voltage spikes or surges effectively.

Nominal Breakdown Voltage: 21.05 V

The specific breakdown voltage ensures reliable protection against overvoltage conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the device can withstand elevated temperatures during operation.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Transient Voltage Suppressor (TVS) diode technology ensures quick response and effective suppression of voltage spikes.

Technical Specifications

Transient Suppression Devices SMA6J18A-M3/5A attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

22.1 V

Minimum Breakdown Voltage:

20 V

Nominal Breakdown Voltage:

21.05 V

Maximum Clamping Voltage:

33.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

4 W

Maximum Repetitive Peak Reverse Voltage:

18 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMA6J18A-M3/5A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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