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SM15T18CA-E3/9AT

Vishay Intertechnology

SM15T18CA-E3/9AT by Vishay Intertechnology

Vishay Intertechnology's SM15T18CA-E3/9AT is a single avalanche diode with 1500W power dissipation, 18V breakdown voltage, and bidirectional polarity. Ideal for transient suppression in electronic circuits operating b/w -65°C to 150°C. Suitable for surface mount applications requiring high clamping voltage of 25.2V.

Median Price

$0.149

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,436 parts In-Stock

1+ parts

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5,436

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Rutronik

Germany . 3,500 parts In-Stock

1+ parts

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$0.149

3,500

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$0.149

Nova Conductors

Japan . 96 parts In-Stock

1+ parts

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96

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 118 parts In-Stock

1+ parts

$0.043

100+ parts

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118

$0.043

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Corohmni

South Africa . 668 parts In-Stock

1+ parts

$0.084

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668

$0.084

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Ampacity Inc.

Singapore . 1,547 parts In-Stock

1+ parts

$1.010

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1,547

$1.010

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Component Stockers USA

USA . 17,925 parts In-Stock

1+ parts

$4.800

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17,925

$4.800

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AZTECH Wire

Italy . 678 parts In-Stock

1+ parts

$16.473

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678

$16.473

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Continental Prestige Electronics

USA . 5,345 parts In-Stock

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5,345

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Argo Parts USA

USA . 4,415 parts In-Stock

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4,415

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Bastille Electronics

Australia . 750 parts In-Stock

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750

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Overview

Enhance your electronic devices with the SM15T18CA-E3/9AT by Vishay Intertechnology, a top-tier manufacturer known for its quality products. As a leading device in the Transient Suppression Devices category, this product offers unmatched protection against voltage spikes, ensuring the longevity and reliability of your equipment. With a high power dissipation capacity and a wide operating temperature range, the SM15T18CA-E3/9AT is the ideal choice for various applications where transient voltage protection is essential. Invest in this versatile and efficient device today to safeguard your electronics and enjoy uninterrupted performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the device, ensuring it can withstand various environmental conditions.

Config: SINGLE

The single configuration simplifies the installation process and makes it easier to integrate into different systems.

Surface Mount: YES

Being surface mountable allows for easy and efficient mounting onto PCBs, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capacity, this device can effectively handle sudden spikes in voltage, protecting the circuitry downstream.

Nominal Breakdown Voltage: 18 V

The nominal breakdown voltage ensures that the device activates when the voltage surpasses a safe threshold, preventing damage to connected components.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows this device to function reliably in harsh environments without degradation in performance.

Minimum Operating Temperature: -65 °C

With a low minimum operating temperature, this device can still operate effectively in extreme cold conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type is specifically designed for transient suppression, providing reliable protection against voltage spikes and surges.

Maximum Clamping Voltage: 25.2 V

The maximum clamping voltage ensures that any transient voltage spikes are limited to a safe level, protecting the connected circuitry.

Diode Element Material: SILICON

Silicon diodes are known for their high performance and reliability, making them a preferred choice for transient suppression devices.

Technical Specifications

Transient Suppression Devices SM15T18CA-E3/9AT attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

18.9 V

Minimum Breakdown Voltage:

17.1 V

Nominal Breakdown Voltage:

18 V

Maximum Clamping Voltage:

25.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM15T18CA-E3/9AT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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