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SM15T100CAHE3_A/H

Vishay Intertechnology

SM15T100CAHE3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM15T100CAHE3_A/H is a single transient suppression device with 1500W power dissipation, 100V breakdown voltage, and 1uA reverse current. Ideal for bidirectional protection in applications requiring high clamping voltage like automotive electronics due to AEC-Q101 compliance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,360 parts In-Stock

1+ parts

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5,360

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 152 parts In-Stock

1+ parts

$0.037

100+ parts

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152

$0.037

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Aztec Data Supply Inc.

USA . 4,009 parts In-Stock

1+ parts

$0.141

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4,009

$0.141

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Semicontronic

India . 1,249 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

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1,249

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 599 parts In-Stock

1+ parts

$1.010

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599

$1.010

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AZTECH Wire

Italy . 536 parts In-Stock

1+ parts

$10.587

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536

$10.587

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Argo Parts USA

USA . 4,913 parts In-Stock

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4,913

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Continental Prestige Electronics

USA . 2,543 parts In-Stock

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2,543

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Protect your electronics with the Vishay Intertechnology SM15T100CAHE3_A/H transient suppression device. Designed for high performance and reliability, this product offers superior protection against voltage transients in a compact, single configuration package. Ideal for a wide range of applications, this diode type device is perfect for safeguarding sensitive electronic components from damage. Trust Vishay Intertechnology to deliver quality products that provide value, benefits, and peace of mind to our customers.

Feature Benefit Bullets

Package Body Material

The use of plastic/epoxy material in the package body provides durability and protection to the internal components of the device, making it a reliable choice for transient suppression.

Config

The single configuration simplifies the installation process and reduces the chances of errors, making it user-friendly.

Maximum Non Repetitive Peak Reverse Power Dissipation

With a high maximum non repetitive peak reverse power dissipation of 1500 W, this device can effectively handle transient surges and protect the connected equipment.

Nominal Breakdown Voltage

The nominal breakdown voltage of 100 V ensures reliable protection against voltage spikes, making it suitable for various applications.

Maximum Reverse Current

The low maximum reverse current of 1 uA signifies efficient suppression of reverse currents, ensuring minimal impact on the connected circuit.

Package Shape

The rectangular package shape facilitates easy mounting and placement, enhancing the overall usability of the device.

No. of Terminals

With two terminals, the device offers simple connectivity options and can easily be integrated into existing circuits.

Maximum Operating Temperature

The high maximum operating temperature of 150°C ensures reliable performance even in demanding environmental conditions.

Minimum Operating Temperature

The low minimum operating temperature of -65°C allows the device to function effectively in extreme cold environments.

Terminal Finish

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable connection with other components.

Terminal Position

The dual terminal position allows for flexibility in wiring and installation, making it adaptable to different system configurations.

Maximum Power Dissipation

The maximum power dissipation of 6.5 W indicates the device's ability to handle power surges efficiently, protecting the connected circuit.

Minimum Breakdown Voltage

The minimum breakdown voltage of 95 V ensures consistent protection against voltage spikes, enhancing the device's reliability.

Maximum Breakdown Voltage

The high maximum breakdown voltage of 105 V provides a safety margin against unexpected voltage fluctuations, ensuring stable operation.

Diode Type

The trans voltage suppressor diode type is specifically designed to protect against voltage transients, making it an ideal choice for transient suppression applications.

Technology

The avalanche technology allows for quick response to transient events, ensuring effective suppression and protection of the connected circuit.

Terminal Form

The C bend terminal form provides a secure connection and easy integration into the circuit, enhancing the device's reliability.

Maximum Repetitive Peak Reverse Voltage

The maximum repetitive peak reverse voltage of 85.5 V indicates the device's ability to withstand repeated voltage surges and protect the circuit effectively.

Polarity

The bidirectional polarity ensures protection against voltage transients from both directions, making it versatile and suitable for various applications.

Maximum Clamping Voltage

The maximum clamping voltage of 137 V limits the voltage spike to a safe level, protecting the connected equipment from damage.

Diode Element Material

The use of silicon diode element material provides high reliability and durability, ensuring long-term performance and protection against transient events.

Technical Specifications

Transient Suppression Devices SM15T100CAHE3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

105 V

Minimum Breakdown Voltage:

95 V

Nominal Breakdown Voltage:

100 V

Maximum Clamping Voltage:

137 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

85.5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

85.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM15T100CAHE3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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