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SI7716ADN-T1-GE3

Vishay Intertechnology

SI7716ADN-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology SI7716ADN-T1-GE3 is a N-channel FET with 30V DS breakdown voltage, ideal for switching applications. Features include 32A max pulsed drain current, 0.0135 ohm max drain-source resistance, and 150°C max operating temperature. Suitable for power management in various electronic devices.

Median Price

$1.302

Lifecycle Status

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Chip1Stop

Japan . 2,969 parts In-Stock

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$1.760

100+ parts

$0.746

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$0.679

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2,969

$1.760

$0.746

$0.679

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DigiKey

USA . 7,758 parts In-Stock

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$1.770

100+ parts

$0.754

1k+ parts

$0.544

10k+ parts

$0.443

7,758

$1.770

$0.754

$0.544

$0.443

Mouser Electronics

USA . 1,076 parts In-Stock

1+ parts

$1.770

100+ parts

$0.754

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$0.580

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1,076

$1.770

$0.754

$0.580

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Element14

Singapore . 4,754 parts In-Stock

1+ parts

$2.570

100+ parts

$1.100

1k+ parts

$0.707

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$0.693

4,754

$2.570

$1.100

$0.707

$0.693

Arrow

USA . 36,000 parts In-Stock

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$0.508

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Verical

USA . 36,000 parts In-Stock

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$0.508

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Future Electronics

Canada . 27,000 parts In-Stock

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$0.845

27,000

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$0.845

Farnell

UK . 4,243 parts In-Stock

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$0.571

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$0.433

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$0.424

4,243

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$0.571

$0.433

$0.424

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Vyrian

USA . 88,745 parts In-Stock

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$0.404

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$0.404

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Chip Stock

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IBS Electronics

USA . 27,000 parts In-Stock

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$1.185

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$1.185

NAC Semi

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Cyclops Electronics Ltd

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Bristol Electronics

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$0.363

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ACDS - Activité Composants Distribution Service

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EPE Components Inc.

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Continental Prestige Electronics

USA . 8,262 parts In-Stock

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$1.380

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$0.844

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$0.512

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8,262

$1.380

$0.844

$0.512

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Corohmni

South Africa . 531 parts In-Stock

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$1.795

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531

$1.795

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Microchip USA

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Perfect Parts

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Overview

Discover the powerful performance and reliability of the Vishay Intertechnology SI7716ADN-T1-GE3 Power Field Effect Transistor. With its N-CHANNEL design and SINGLE configuration with a built-in diode, this transistor is perfect for switching applications. Offering a maximum pulsing drain current of 32 A and an avalanche energy rating of 11.25 mJ, this transistor delivers exceptional efficiency and durability. Whether you're in need of high-quality components for automotive, industrial, or consumer electronics, the SI7716ADN-T1-GE3 is sure to exceed your expectations. Unlock the potential of your designs with Vishay Intertechnology's innovative technology at your fingertips.

Feature Benefit Bullets

Polarity or Channel Type

N-CHANNEL FETs are commonly used in power applications due to their high efficiency and low on-state resistance.

Minimum DS Breakdown Voltage

With a high minimum breakdown voltage, this FET can safely handle higher voltages, making it suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM)

The high pulsed drain current rating allows for handling short-term spikes in current, making it suitable for switching applications.

Maximum Power Dissipation (Abs)

The high power dissipation rating ensures the FET can handle high power levels without overheating, making it reliable in demanding applications.

Maximum Operating Temperature

With a high operating temperature range, this FET can operate in harsh environments without compromising performance.

Technical Specifications

Power Field Effect Transistors (FET) SI7716ADN-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

11.25 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

16 A

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.0135 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-XDSO-C5

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

32 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Pure Matte Tin (Sn) - annealed

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI7716ADN-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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